Type-II and type-I interband cascade lasers

Electronics Letters

Volumn 32, Issue 1, 1996, Pages 45-46

  Meyer, J R ^a   Vurgaftman, I ^a   Yang, R Q ^b   Ram Mohan, L R ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c WORCESTER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; FINITE ELEMENT METHOD; LIGHT EMISSION; PHONONS; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ELASTIC INTERBAND TUNNELING; GAIN CALCULATIONS; HOLE INJECTION; INTERBAND CASCADE LASERS; PHONON RELAXATION PATH; SEMICONDUCTOR JUNCTION LASERS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0030568193     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960064     Document Type: Article

References (6)

1. FAIST, J., CAPASSO, F., SIRTORI, C., SIVCO, D.L., HUTCHINSON, A.L., and CHO, A.Y.: 'Vertical transition quantum cascade laser with Bragg confined excited state', Appl. Phys. Lett., 1995, 6, (5), pp. 538-540
2. xSb superlattices', Appl. Phys. Lett., 1994, 64, (23), pp. 3160-3162
3. 1-x/Sb superlattice-based midwave infrared lasers', J. Appl. Phys., 1994, 76, pp. 1940-1942
4. x/Sb/InAs superlattice diode laser', Electron. Lett., 1995, 31, (4), pp. 275-276
5. MEYER, J.R., HOFFMAN, C.A., BARTOLI, F.J., and RAM-MOHAN, L.R.: 'Type-II quantum-well lasers for the mid-wavelength infrared', Appl. Phys. Lett., 1995, 67, (6), pp. 757-759
6. YANG, R.Q.: '', Superlatt. Microstruct., 1995, 17, (1), pp. 77-83