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Volumn 68, Issue 20, 1996, Pages 2790-2792
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High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μm
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Author keywords
[No Author keywords available]
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Indexed keywords
CONTINUOUS WAVE LASERS;
ELECTRIC CURRENTS;
HETEROJUNCTIONS;
HIGH POWER LASERS;
LASER MODES;
LIQUID PHASE EPITAXY;
QUANTUM EFFICIENCY;
SEMICONDUCTING INDIUM COMPOUNDS;
SPECTROSCOPY;
THERMAL EFFECTS;
CONTINUOUS WAVE OPERATION;
DOUBLE HETEROSTRUCTURES;
INDIUM ARSENIC ANTIMONIDE;
INDIUM ARSENIC ANTIMONY PHOSPHIDE;
THRESHOLD CURRENTS;
SEMICONDUCTOR LASERS;
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EID: 0030146288
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.116608 Document Type: Article |
Times cited : (47)
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References (6)
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