Low-threshold laser diodes based on type-II GalnAsSb/GaSb quantum-wells operating at 2.36μm at room temperature

Electronics Letters

Volumn 32, Issue 24, 1996, Pages 2279-2280

  Baranov, A N ^a   Cuminal, Y ^a   Boissier, G ^a   Alibert, C ^a   Joullie A ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

DIFFERENTIAL QUANTUM EFFICIENCY; PULSED THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0030286888     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961496     Document Type: Article

References (10)

1. CHOI, H.K., and EGLASH, S.J.: 'High-power multiple-quantum-well GaInAsSb/AlGaAaSb diode lasers emitting at 2.1μm with low threshold current density', Appl. Phys. Lett., 1992, 61, pp. 1154-1156
2. CHOI, H.K., TURNER, G.W., and EGLASH, S.J.: 'High-power GaInAsSb/AlGaAaSb multiple-quantum-well diode lasers emitting at 1.9μm', IEEE Photonics Technol. Lett., 1994, 6, pp. 7-9
3. CHOI, H.K., TURNER, G.W., CONNORS, M.K., FOX, S., DAUGA, C., and DAGENAIS, M.: 'High-power, high-temperature operation of GaInAsSb/AlGaAaSb ridge-waveguide lasers emitting at 1.9μm', IEEE Photonics Technol. Lett., 1995, 7, pp. 281-283
4. LEE, H., YORK, P.K., MENNA, R.J., MARTINELLI, R.U., GARBUZOV, D.Z., NARAYAN, S.Y., and CONNOLY, J.C.: 'Room-temperature 2.78μm AlGaAsSb/InGaAsSb quantum-well lasers', Appl. Phys. Lett., 1995, 66, pp. 1942-1944
5. BARANOV, A.N., CUMINAL, Y., BOISSIER, G., NICOLAS, J.C., LAZZARI, J.L., ALIBERT, C., and JOULLIÉ, A.: 'Electroluminescence of GaInSb/GaSb strained single quantum-well structures grown by molecular beam epitaxy', Semicond. Sci. Technol., 1996, 11, pp. 1185-1188
6. BARANOV, A.N., CUMINAL, Y., BOISSIER, G., ALIBERT, C., and JOULLIÉ, A.: 'Mid-infrared quantum-well lasers based on the GaIn(As)Sb/GaSb system'. Mid-Infrared Optoelectron.: Materials & Devices, Int. Conf., Lancaster, 17-18 September 1996
7. LAZZARI, J.L., TOURNIÉ, E., PITARD, F., JOULLIÉ, A., and LAMBERT, B.: 'Growth limitations by the miscibility gap in the liquid phase epitaxy of GaInAsSb on GaSb', Materials Sci. Eng., 1991, B9, pp. 125-128
8. CHOI, H.K., and EGLASH, S.J.: 'Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy', Appl. Phys. Lett., 1991, 59, pp. 1165-1166
9. KURTZ, S.R., BIEFELD, R.M., ALLERMAN, A.A., HOWARD, A.J., CRAWFORD, M.H., and PELCZYNSKI, M.W.: 'Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5μm', Appl. Phys. Lett., 1996, 68, pp. 1332-1334
10. ZEGRYA, G.G., and ANDREEV, A.D.: 'Mechanism of suppression of Auger recombination processes in type II heterostructures', Appl. Phys. Lett., 1995, 67, pp. 2681-2683