InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 μm grown by metal-organic chemical vapor deposition

IEEE Photonics Technology Letters

Volumn 9, Issue 2, 1997, Pages 173-175

  Wu, D ^a   Kaas, E ^a   Diaz, J ^a   Lane, B ^a   Rybaltowski, A ^a   Yi, H J ^a   Razeghi, M ^a,b  

^a Northwestern University   (United States)

^b IEEE

Author keywords

High power; InAs; Midwave infrared lasers; MOCVD

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRON DENSITY MEASUREMENT; HEAT SINKS; HIGH POWER LASERS; INFRARED DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTORESISTS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DOPING;

HIGH POWER CONTINUOUS WAVE OPERATION; MIDWAVE INFRARED LASERS;

SEMICONDUCTOR LASERS;

EID: 0031076528     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.553081     Document Type: Article

References (11)

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