High-power/low-threshold type-II interband cascade mid-IR laser - Design and modeling

IEEE Photonics Technology Letters

Volumn 9, Issue 2, 1997, Pages 170-172

  Vurgaftman, I ^a   Meyer, J R ^a,c   Ram Mohan, L R ^b,c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b WORCESTER POLYTECHNIC INSTITUTE   (United States)

^c IEEE

Author keywords

Optical planar waveguides; Optoelectronic devices; Quantum well lasers; Semiconductor lasers; Semiconductor superlattices; Tunnel devices effects

Indexed keywords

CURRENT DENSITY; ELECTRON TRANSITIONS; ELECTRON TUNNELING; INFRARED DEVICES; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR SUPERLATTICES;

AUGER RECOMBINATION; FREE CARRIER ABSORPTION; INTERBAND CASCADE LASER (T2ICL); LASING TRANSITIONS; PHONON RELAXATION;

QUANTUM WELL LASERS;

EID: 0031078275     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.553079     Document Type: Article

References (9)

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