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Volumn 27, Issue 12, 1998, Pages 1291-1295

RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants

Author keywords

Boron shallow junctions; Ion implants; Rapid thermal processing (RTP); Sheet resistance

Indexed keywords

BORON COMPOUNDS; ION IMPLANTATION; OXYGEN SENSORS; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON;

EID: 0032300598     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0088-1     Document Type: Article
Times cited : (10)

References (18)
  • 11
    • 3843059118 scopus 로고    scopus 로고
    • U.S. patent pending application (1998)
    • D.F. Downey, U.S. patent pending application (1998).
    • Downey, D.F.1
  • 18
    • 3843060280 scopus 로고    scopus 로고
    • U.S. patent 5,580,830
    • U.S. patent 5,580,830.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.