Rapid thermal process requirements for the annealing of ultra-shallow junctions

Materials Research Society Symposium - Proceedings

Volumn 470, Issue , 1997, Pages 299-311

  Downey, Daniel F ^a   Daryanani, Sonu L ^a   Meloni, Marylou ^a   Brown, Kristen M ^a   Felch, Susan B ^a   Lee, Brian S ^a   Marcus, Steven D ^a   Gelpey, Jeff ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; ELLIPSOMETRY; ION IMPLANTATION; OXIDES; SEMICONDUCTOR DOPING; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

FOUR POINT PROBE SHEET RESISTANCE; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0031374653     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-470-299     Document Type: Conference Paper

References (15)