Quantum dot active regions for extended wavelength range GaAs-based light emitting devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3283, Issue , 1998, Pages 144-151

  Huffaker, Diana L ^a   Schaub, Jeremy D ^a   Deng, Hongyu ^a   Deppe, Dennis G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

MBE crystal growth; Native oxides; Quantum dots; VCSELs

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRON ENERGY LEVELS; EXTRATERRESTRIAL ATMOSPHERES; GALLIUM; GALLIUM ALLOYS; GRAIN BOUNDARIES; GROWTH (MATERIALS); LIGHT; LIGHT EMISSION; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SURFACE EMITTING LASERS;

ACTIVE REGIONS; CAVITY LASERS; CRYSTAL GROWTH TECHNIQUES; ELECTROLUMINESCENCE EFFICIENCIES; INAS/GAAS; LONG WAVELENGTHS; LOW THRESHOLD LASING; MBE CRYSTAL GROWTH; MONOLAYER GROWTHS; NATIVE OXIDES; QUANTUM DOTS; SHORTER WAVELENGTHS; VCSELS; WAVELENGTH RANGES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0343266805     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.316678     Document Type: Conference Paper

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