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Volumn 2, Issue 1-4, 1998, Pages 763-767

Design and fabrication of Si/SiGe n-type MODFETs

Author keywords

Molecular beam epitaxy; SiGe heterodevices; SiGe heterostructures; SiGe MODFET

Indexed keywords


EID: 0011648282     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(98)00156-8     Document Type: Article
Times cited : (9)

References (7)
  • 2
    • 0029490096 scopus 로고
    • Si/SiGe high-speed field-effect transistors
    • Washington
    • K. Ismail, Si/SiGe high-speed field-effect transistors, IEDM'95 Tech. Dig., Washington, 1995, pp. 509.
    • (1995) IEDM'95 Tech. Dig. , pp. 509
    • Ismail, K.1
  • 4
    • 0030734469 scopus 로고    scopus 로고
    • Performance estimation of Si/SiGe Hetero-CMOS circuits
    • accepted for publication
    • R. Hagelauer, T. Ostermann, U. König, M. Glück, G. Höck, Performance estimation of Si/SiGe Hetero-CMOS circuits, IEE Electron. Lett. 33 (3) (1997), accepted for publication.
    • (1997) IEE Electron. Lett. , vol.33 , Issue.3
    • Hagelauer, R.1    Ostermann, T.2    König, U.3    Glück, M.4    Höck, G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.