Transimpedance amplifiers based on Si/SiGe MODFETs

Electronics Letters

Volumn 34, Issue 5, 1998, Pages 499-500

  Saxarra, M ^a   Gluck M ^b   Albers, J N ^c   Behammer, D ^b   Langmann, U ^a   Konig U ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b DAIMLER AG   (Germany)

^c Multilink Technology GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HETEROJUNCTIONS; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

TRANSIMPEDANCE AMPLIFIERS;

SEMICONDUCTOR LASERS;

EID: 0032485172     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980370     Document Type: Article

References (6)

1. GLÜCK, M., HACKBARTH, T., BIRK, M., HAAS, A., KOHN, E., and KÖNIG, U.: 'Design and fabrication of Si/SiGe n-type MODFETs'. Paper THM8, MSS8 Conf. Proc., Santa Barbara, 14-18 July 1997 (to be published in J. Physica Scripta E)
2. ISMAIL, K.: 'Si/SiGe high-speed field-effect transistors', IEDM Tech. Dig., 1995, pp. 509-512
3. HAGELAUER, R., OSTERMANN, T., KÖNIG, U., GLÜCK, M., and HÖCK, G.: 'Performance estimation of Si/SiGe hetero-CMOS circuits', Electron. Lett., 1997, 33, (3), pp. 208-209
4. OSTERMANN, T., GLÜCK, M., HAGELAUER, R., KÖNIG, U., DOBERSBERGER, M., BIRK, M., and OEHLER, F.: 'Inverter circuits with Si/SiGe n-type MODFETs'. Proc. ISDRS '97, Charlottesville (to be published)
5. STATZ, H., NEWMAN, P., SMITH, I.W., PUCEL, R.A., and HAUS, H.A.: 'GaAs FET device and circuit simulation in SPICE', IEEE Trans. Electron Devices, 1987, ED-34, (2), pp. 160-169
6. SADEK, A., ISMAIL, K., ARMSTRONG, M.A., ANTONIADIS, D.A., and STERN, F.: 'Design of Si/SiGe heterojunction complementary metaloxide-semiconductor transistors', IEEE Trans. Electron Devices, 1996, ED-43, (8), pp. 1224-1232