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Journal of Materials Science Letters

Volumn 22, Issue 22, 2003, Pages 1581-1583

Formation mechanism of amorphous layer at the interface of Si(111) substrate and AIN buffer layer for GaN

(7) Hu, Guiqing a Kong, Xiang a Wang, Yiqian a Wan, Li a Duan, Xiaofeng a Lu, Yuan b Liu, Xianglin b

a INSTITUTE OF PHYSICS (China)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; AMORPHOUS SILICON; FILM GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; STRESS ANALYSIS;

SELECTED AREA ELECTRON DIFFRACTION (SAED);

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0242663223 PISSN: 02618028 EISSN: None Source Type: Journal
DOI: 10.1023/A:1026328323174 Document Type: Article

Times cited : (5)

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