Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density

IEICE Transactions on Electronics

Volumn E86-C, Issue 10, 2003, Pages 1923-1928

  Ida, Minoru ^a   Kurishima, Kenji ^a   Watanabe, Noriyuki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Graded base; Heterojunction bipolar transistor; Indium phosphide

Indexed keywords

CURRENT DENSITY; ELECTRIC NETWORK ANALYSIS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUPERLATTICES;

STEP-GRADED COLLECTOR STRUCTURES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0242412465     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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