90-GHz operation of a novel dynamic frequency divider using InP/InGaAs HBTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 43-46

  Tsunashima, Satoshi ^a   Nakajima, Hiroki ^a   Sano, Eiichi ^a   Ida, Minoru ^a   Kurishima, Kenji ^a   Watanabe, Noriyuki ^a   Enoki, Takatomo ^a   Sugahara, Hirohiko ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLIP FLOP CIRCUITS; INTEGRATED CIRCUIT TESTING; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL PROCESSING;

FREQUENCY DIVIDERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036052668     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. 74 GHz dynamic frequency divider using InAlAs/InGaAs/InP HEMTs
2. A 79 GHz dynamic frequency divider in SiGe bipolar technology
3. 82 GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs
4. High-speed SiGe: C bipolar technology
5. Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBT's under bias and temperature stress
6. Undoped-emitter InP/InOaAs HBTs for high-speed and low-power applications
7. 9 GHz bandwidth, 8-20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technology
8. Very-high-speed Si bipolar static frequency dividers with new T-type flip-flops
9. 80 GHz 4:1 frequency divider IC uing non-self-aligned InP/InGaAs heterostructure bipolar transistors
10. IC-oriented self-aligned highperformance AlGaAs/GaAs ballistic collection transistors and their applications to high-speed ICs