Undoped-emitter InP/InGaAs HBTs for high-speed and low-power applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 854-856

  Ida, M ^a   Kurishima, K ^a   Nakajima, H ^a   Watanabe, N ^a   Yamahata, S ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRON TUNNELING; EMITTER COUPLED LOGIC CIRCUITS; INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; THERMIONIC EMISSION; TRANSCONDUCTANCE;

EMITTER CHARGING TIME;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034449205     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)