InP/InGaAs/InP double heterojunction bipolar transistors with 300 GHz fmax

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 31-34

  Krishnan, S ^a   Dahlstrom, M ^a   Mathew, T ^a   Wei, Y ^a   Scott, D ^a   Urteaga, M ^a   Rodwell, M J W ^a   Liu, W K ^a   Lubyshev, D ^a   Fang, X M ^a   Wu, Y ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SUPERLATTICES;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034855411     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. High ft and fmax transferred-substrate HBTs
2. CEO > 6V
3. Ultrahigh-speed InP/InGaAs double heterostructure bipolar transistors and analyses of their operation
4. Bandgap engineered InP-based power double heterojunction bipolar transistors
5. InP HBTs by vertical and lateral wet etching