2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier

Solid-State Electronics

Volumn 48, Issue 2, 2004, Pages 359-361

  Irokawa, Y ^a   Luo, B ^b   Kang, B S ^b   Kim, Jihyun ^b   LaRoche, J R ^b   Ren, F ^b   Baik, K H ^c   Pearton, S J ^c   Pan, C C ^d   Chen, G T ^d   Chyi, J I ^d   Park, S S ^e   Park, Y J ^e  

^a Rd Management Section   (Japan)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^e Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTROPLATING; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS;

THERMAL MANAGEMENT;

ELECTRIC RECTIFIERS;

EID: 0242366635     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00323-X     Document Type: Article

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