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Volumn 226, Issue 1, 2001, Pages 1-7

Defect generation in multi-stacked InAs quantum dot/GaAs structures

Author keywords

Characterization; Defects; Molecular beam epitaxy; Semiconducting materials

Indexed keywords

INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; MONOLAYERS; MULTILAYERS; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STACKING FAULTS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0035368586     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00815-6     Document Type: Article
Times cited : (33)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.