Annealing behavior of InAs/GaAs quantum dot structures

Journal of Electronic Materials

Volumn 27, Issue 2, 1998, Pages 59-61

  Wang, Z M ^a   Feng, S L ^a   Lu, Z D ^a   Zhao, Q ^a   Yang, X P ^a   Chen, Z G ^a   Xu, Z Y ^a   Zheng, H Z ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Annealing; InAs GaAs; Quantum dots

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); LUMINESCENCE OF SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM DOT LUMINESCENCE INTENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031996843     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0188-y     Document Type: Article

References (20)

1. S. Guha, A. Madhukar and K.C. Rajkumar, Appl. Phys. Lett. 57, 2110 (1990).
2. D. Leonard, M. Krishnamurthy, C.M. Reaves, S.P. DenBaars and P.M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
3. J.M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
4. Q.H. Xie, A. Madhukar, P. Chen and N.P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995).
5. G.S. Solonom, J.A. Trezza, A.F. Marshall and J. S. Harris, Phys. Rev. Lett. 76, 952 (1996).
6. Y. Sugiyama, Y. Nakata, K. Imamura, S. Muto and N. Yokoyama, Jpn. J. Appl. Phys. 35, 1320 (1996).
7. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
8. N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, S.S. Ruvimov, M.V. Maximov, P.S. Kopev, Zh.I. Alferov, U. Richter, P. Werner, U. Gosele and J. Heydenreich, Electron. Lett. 30, 1416 (1994).
9. Q.H. Xie, N.P. Kobarashi, T.R. Ramachandran, A. Kalburge, P. Chen and A. Madukar, J. Vac. Sci. Technol. B 14, 2203 (1996).
10. K. Kamath, P. Bhattacharga, T. Sosnowski, T. Norris and J. Phillips, Electron. Lett. 2, 1374 (1996).
11. R. Mirin, A. Gossard and J. Bowers, Electron. Lett. 32, 1732 (1996).
12. H. Shohi, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama and H. Ishikawa, Jpn. J. Appl. Phys. 35, 903 (1996).
13. R. Leon, Y. Kim, C. Jagadish, M. Gal, J. Zou and D.J.H. Cockayne, Appl. Phys. Lett. 69, 1888 (1996).
14. A.O. Kosogov, P. Werner, U. Gosele, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Shukov, P.S. Kopev, N.A. Bert and Zh.I. Alferov, Appl. Phys. Lett. 69, 3072 (1996).
15. X.P. Yang, W. Zhang, Z.G. Chen, F.L. Wang, J.F. Tian, Y.M. Deng, H.Z. Zheng, M. Gao and X.F. Duan, Chinese J. Semiconductors 17, 869 (1996). Similar results have been reported by A. Sasaki, J. Cryst. Growth 163, 143 (1996),
16. X.P. Yang, W. Zhang, Z.G. Chen, F.L. Wang, J.F. Tian, Y.M. Deng, H.Z. Zheng, M. Gao and X.F. Duan, Chinese J. Semiconductors 17, 869 (1996). Similar results have been reported by A. Sasaki, J. Cryst. Growth 163, 143 (1996),
17. S.S. Lyer and F.K. LeGoues, J. Appl. Phys. 65, 4693 (1989).
18. J.M. Baribeau, R. Pascual and S. Saimoto, Appl. Phys. Lett. 57, 1502 (1990).
19. S.W. Ryu, I. Kim, B.D. Choe and W.G. Jeong, Appl. Phys. Lett. 67, 1417 (1995).
20. Z.M. Wang, S.L. Feng, Z.D. Lu, Q. Zhao, Z.G. Chen, Z.Y. Xu and H.Z. Zheng, Proc. Tenth Intl. Conf. on Superlattices, Microstructures, and Microdevices (ICSMM-10), July 8-11, 1997, in Lincoln, Nebraska, (Phys. Low-Dim. Struct. in press).