Threading dislocations in multilayer structure of InAs self-assembled quantum dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5493-5496

  Shiramine, Ken ichi ^a   Horisaki, Yasunobu ^a   Suzuki, Dai ^a   Itoh, Satoru ^a   Ebiko, Yoshiki ^a   Muto, Shunichi ^a   Nakata, Yoshiaki ^a   Yokoyama, Naoki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; MULTILAYERS; OPTICAL DATA STORAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

BURGERS VECTORS; SELF ASSEMBLED QUANTUM DOTS; SPECTRAL HOLE BURNING; THREADING DISLOCATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032180378     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5493     Document Type: Article

References (18)