Advances in elevated diode technologies for integrated circuits: Progress towards monolithic instruments

IEE Proceedings: Circuits, Devices and Systems

Volumn 150, Issue 4, 2003, Pages 235-249

  Theil, J A ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTOR JUNCTIONS; SPECTRUM ANALYSIS;

PHOTODETECTION;

DIODES;

EID: 0142250494     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20030529     Document Type: Conference Paper

References (57)

1. Schaufelbuhl, A., Schneeberger, N., Munch, U., and Waelt, M. et al.: 'Uncooled low-cost thermal imager based on micromachined CMOS integrated sensor array', Microelectromech. Syst., 2000, 10, (4), pp. 503-510
2. Abshire, P., and Andreou, A.G.: 'Capacity and energy cost of information in biological and silicon photoreceptors', Proc. IEEE, 2001, 89, (7), pp. 1052-1064
3. Blalock, T.N., Baumgartner, R.A., and Hornak, T.: 'A 1.5 GOPS analog CMOS array processor with integrated optical image acquisition for position encoding applications'. Symposium on VLSI Circuits, Digest of Technical Papers., 1998, pp. 204-205
4. Yadid-Pecht, O., Ginosar, R., and Shacham Diamand, Y.: 'A random access photodiode array for intelligent image capture', IEEE Trans. Electron Devices, 1991, 38, (8), pp. 1772-1780
5. Renshaw, D., Denyer, P.B., Wang, G., and Lu, M.: 'ASIC vision'. Proc. IEEE Custom Integrated Circuits Conference, Baston, MA, USA, 1990, pp. 7.3/1-4
6. Theil, J.A., Cao, M., Kooi, G., Ray, G.W., Greene, W., Lin, J., Budrys, A.J., Yoon, U., Ma, S., and Stork, H.: 'Hydrogenated amorphous silicon photodiode technology for advanced CMOS active pixel sensor imagers', Mater. Res. Soc. Symp. Proc., 2000, 609, pp. A14.3.1-A14.3.6
7. Theil, J.A., Haddad, H., Snyder, R., Zelman, M., Hula, D., and Lindahl, K.: 'Performance of a-Si:H photodiode technology-based advanced CMOS active pixel sensor imagers', Proc. SPIE-Int. Soc. Opt. Eng., 2001, 4435, pp. 206-213
8. Blecher, F., Schneider, B., Sterzel, J., Hillebrand, M., Benthien, S., and Böhm, M.: 'Noise analysis of imagers with a-Si:H pin diode pixels', J. Non-Cryst. Solids, 2000, 266, pp. 1188-1192
9. Harada, N.: 'Amorphous semiconductor technologies and devices' Vol. 6 (North Holland, 1984), p. 283
10. Abraham, H.E., Antoniadis, H., Roitman, D.B., Frischknecht, K., Blalock, T.N., Kishimura, K.A., Knotts, T.A., Theil, J.A., Bright, C., Miller, J.N., and Moon, R.: 'XGA resolution full video microdisplay using light emitting polymers on a silicon active matrix circuit', Proc. SPIE-Int. Soc. Opt. Eng., 2001, 4105, pp. 37-52
11. Howard, W.E., and Prache, O.F.: 'Microdisplays based upon organic light-emitting diodes', IBM J. Res. Dev., 2001, 45, (1), pp. 115-127
12. Prache, O.: Digest of Soc. Information Display Conf., 2001, p. 514
13. Fischer, H., Schulte, J., Giehl, J., Böhm, M., and Schmitt, J.P.M.: 'Thin film on ASIC-a novel concept for intelligent image sensors', Mater. Res. Soc. Symp. Proc., 1992, 285, pp. 1139-1144
14. Theil, J., Lefforge, D., Kooi, G., Cao, M., and Ray, G.: 'Mid-gap states measurements of low-level boron-doped a-Si:H films', J. Non-Cryst. Solids, 2000, 266, pp. 569-573
15. Fischer, H., Schulte, J., Rieve, P., and Böhm, M.: Technology and performance of TFA (thin film on ASIC)-sensors', Mater. Res. Soc. Symp. Proc., 1994, 336, pp. 867-872
16. Theil, J.A., Snyder, R., Hula, D., Lindahl, K., Haddad, H., and Roland, J.: 'a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers', J. Non-cryst. Solids, 2002, 299, pp. 1234-1239
17. Zhu, Q., Lule, T., Stiebig, H., Martin, T., Giehl, J., Zhou, J., Fischer, H., and Böhm, M.: 'Color array in TFA technology'. Proc. 4th Int. Conf. on Solid-state and integrated circuit technology, 1995, pp. 727-729
18. Morrison, S., Servati, P., Vygranenko, Y., Nathan, A., and Madan, A.: 'Reduction of dark current under reverse bias in a-Si:H p-i-n photodetectors', Mater. Res. Soc. Symp. Proc., 2002, 715, pp. 701-706
19. Street, R.A.: 'Hydrogenated amorphous silicon' (Cambridge University Press, Cambridge, UK, 1991), pp. 370-371
20. Street, R.A.: 'Thermal generation currents in hydrogenated amorphous silicon p-i-n structures', Appl. Phys. Lett., 1990, 57, (13), pp. 1334-1336
21. Theil, J.A., Kooi, G., and Varghese, R.: 'High deposition rate hydrogenated amorphous silicon (Method, material, and apparatus)'. US6436488, EP1164206, JP2002047568A, 2001
22. Matsuda, A.: 'Plasma and surface reactions for obtaining low defect density amorphous silicon at high growth rates', J. Vac. Sci. Technol. A, Vac. Surf. Films, 1998, 16, (1), pp. 365-368
23. Theil, J.A., Ray, G., Perner, F., and Cao, M.: 'An improved interlayer dielectric for passivation of an elevated integrated circuit sensor structure'. US6051867, EP1052698, JP2001024059, 2000
24. Theil, J.A., and Ma, S.: 'A stacked multiple photosensor structure including independent electrical connections to each photosensor". US6373117, EP1050907, JP2001007310, 2002
25. Eckhardt, A., Schneider, B., Blecher, F., Sterzel, J., Seibel, K., and Bohm, M. et al.: 'Image sensors in TFA technology and their applications for image pre-processing'. Proc. ESSDERC, 1998, pp. 208-211
26. Benthien, S., Lule, T., Schneider, B., and Wagner, M. et al. : 'Vertically integrated sensors for advanced imaging applications', IEEE J. Solid-State Circuits, 2000, 35, (7), pp. 939-945
27. Mutze, F., Seibel, K., Schneider, B., Hillebrand, M., Blecher, F., Lule, T., Keller, H., Rieve, P., Wagner, M., and Böhm, M.: 'UV imager in TFA technology', Mater. Res. Soc. Symp. Proc., 1999, 557, pp. 815-820
28. Schroten, E., Zeman, M., van Swaaij, R.A.C.M.M., Vosteen, L.L.A., and Metselaar, J.W.: 'Simulation of hydrogenated amorphous silicon germanium alloys for bandgap grading', Mater, Res. Soc. Symp. Proc., 1999, 557, pp. 773-778
29. Knipp, D., Stiebig, H., and Wagner, H.: 'Stabilized three color piinip sensor for high illumination conditions', Mater. Res. Soc. Symp. Proc., 1998, 507, pp. 225-230
30. Böhm, M., Blecher, F., Eckhardt, A., and Seibel, K. et al.: 'Image sensors in TFA technology-status and future trends', Mater. Res. Soc. Symp. Proc., 1998, 507, pp. 327-338
31. Lule, T., Benthien, S., Keller, H., Mutze, F., Rieve, P., Seibel, K., Sommer, M., and Böhm, M.: 'Sensitivity of CMOS based imagers and scaling perspectives', IEEE Trans. Electron Devices, 2000, 47, (11), pp. 2110-2122
32. Rieve, P.: 'Spektralselektive optoelectronische Sensoren auf der basis amorphen siliziums'. PhD thesis, Univ.-GH Siegen, Germany 2000
33. Blecher, F., Seibel, K., and Böhm, M.: 'Photo- and dark current noise in a-Si:H pin diodes at forward and reverse bias', Mater. Res. Soc. Symp. Proc., 1998, 507, pp. 175-180
34. Blecher, F., Schneider, B., Hillebrand, M., and Böhm, M.: Mater. Res. Soc. Symp. Proc., 1999, 557
35. Blecher, F., Seibel, K., Hillebrand, M., and Böhm, M.: 'New method to determine the a-Si:H pin diode series resistance by noise measurements', Mater. Res. Soc. Symp. Proc., 1998, 507, pp. 169-174
36. Schneider, B., Blecher, F., Eckhardt, A., and Seibel, K. et al.: Proc. OPTO 98, 233, 1998
37. Forrest, S.R.: 'Active optoelectronics using thin-film organic semiconductors', IEEE J. Sel. Top. Quantum Electron., 2000, 6, (6), pp. 1072-1083
38. Ruhstaller, B., Carter, S.A., Barth, S., and Riel, H. et al.: Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes', J. Appl. Phys., 2001, 89, (8), pp. 4575-4586
39. Burroughes, J.H.: Presented at the 9th Int. Workshop on Inorganic and organic electroluminescence, Bend, OR, USA, 1998
40. Pope, M., and Swenberg, C.E.: 'Electronic processes in organic crystals' (Clarendon, Oxford, UK, 1982)
41. Khreis, O.M., Curry, R.J., Somerton, M., and Gillin, W.P.: 'Infrared organic light emitting diodes using neodymium tris-(8-hydroxyquinoline)', J. Appl. Phys., 2000, 88, (2), pp. 777-780
42. Seguy, I., Jolinat, P., Destruel, P., and Farenc, J. et al.: 'Red organic light emitting device made from triphenylene hexaester and perylene tetraester', J. Appl Phys., 2001, 89, (10), pp. 5442-5448
43. Shoustikov, A.A., You, Y., and Thompson, M.E.: 'Electroluminescence color tuning by dye doping in organic light-emitting diodes', IEEE J. Sel. Top. Quantum. Electron., 1998, 4, (1), pp. 3-13
44. Baldo, M.A., O'Brien, D.F., You, Y., Shoustikov, A., Sibley, S., Thompson, M.E., and Forrest, S.R.: 'Highly efficient phosphorescent emission from organic electroluminescent devices', Nature, 1998, 395, pp. 151-154
45. Baldo, M.A., Lemansky, S., Burrows, P.E., Thompson, M.E., and Forrest, S.R.: 'Very high-efficiency green organic light-emitting devices based on electrophosphorescence', Appl. Phys. Lett., 1999, 76, (1), pp. 4-6
46. Pinner, D.J., Friend, R.H., and Tessler; N.: 'Transient electroluminescence of polymer light emitting diodes using electrical pulses', J. Appl. Phys., 1999, 86, (9), pp. 5116-5130
47. Kovac, J., Wong, T.C., Fung, M.K., and Liu, M.W. et al.: 'Transient electroluminescence of single and multilayer organic light emitting devices', Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol., 2001, 85, pp. 172-176
48. Pinner, D.J., Friend, R.H., and Tessler, N.: 'Analysis of the turn-off dynamics in polymer light-emitting diodes', Appl. Phys. Lett., 2000, 76, (9), pp. 1137-1139
49. Kowalsky, W., Becker, E., Benstem, T., and Dobbertin, T. et al.: 'OLED matrix displays: technology and fundamentals'. Proc. IEEE Int. Conf. on Polymers and adhesives in microelectronics and photonics, 2001, pp. 20-28
50. Meyer, W.: 'Micro dispensing of adhesives and other polymers'. Proc. 1st Int IEEE Conf. on Polymers and adhesives in microelectronics and photonics, 2001, pp. 35-39
51. Mathine, D.L., Jabbour, G.E., Morrell, G.E., and Shaheen, M.M. et 'Fabrication of micropixel arrays of bright organic electroluminescent devices'. Technical Digest of CLEO 1998, Lasers and electro-optics, 1998, p. 7
52. Fossum, E., and Krymski, A.: 'High speed CMOS imaging'. Digest of the LEOS Summer Topical Meetings, 2000, pp. I3-I4
53. Fossum, E.R.: 'Active-pixel sensors challenge CCDs', Laser Focus World, 1993, 29, (6), pp. 83-87
54. Mendis, S., Kemeny, S.E., and Fossum, E.R.: 'CMOS active pixel image sensor', IEEE Trans. Electron. Devices, 1994, 41, (3), pp. 452-453
55. Pain, B., and Fossum, E.R.: 'Approaches and analysis for on-focal-plane analog-to-digital conversion', Proc. SPIE-Int. Soc. Opt. Eng., 1994, 2226, pp. 208-218
56. Yang, D.X.D., Fowler, B., and El Gamal, A.: 'A Nyquist-rate pixel-level ADC for CMOS image sensors', IEEE J. Solid-State Circuits, 1999, 34, (3), pp. 348-356
57. Yang, D.X.D., El Gamal, A., Fowler, B., and Hui, T.: 'A 640 × 512 CMOS image sensor with ultrawide dynamic floating-point pixel-level ADC'. Tech. Digest of Int. Solid-State Circuits Conf., 1999, p. 308