Hydrogenated amorphous silicon photodiode technology for advanced CMOS active pixel sensor imagers

Materials Research Society Symposium-Proceedings

Volumn 609, Issue , 2000, Pages A1431-A1436

  Theil, Jeremy A ^a   Cao, Min ^a   Kooi, Gerrit ^a   Ray, Gary W ^a   Greene, Wayne ^a   Lin, Jane ^a   Budrys, A ^a   Yoon, Uija ^a   Ma, Shawming ^a   Stork, Hans ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; HYDROGENATION; IMAGE SENSORS; LEAKAGE CURRENTS; PHOTODIODES; QUANTUM EFFICIENCY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING;

ACTIVE PIXEL SENSORS;

AMORPHOUS SILICON;

EID: 0034431148     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-609-a14.3     Document Type: Article

References (10)

1. Amorphous and heterogeneous silicon thin films
2. A CCD imager overlaid with an a-Si:H layer
3. Mid-gap states measurements of low-level boron-doped a-Si:H films
4. A high image quality fully integrated CMOS image sensor