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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 24, 2002, Pages 2452011-2452019

Ion mass effect on vacancy-related deep levels in Si induced by ion implantation

(5) Monakhov, E V a Wong Leung, J b Kuznetsov, A Yu a,c Jagadish, C b Svensson, B G a,c

a UNIVERSITY OF OSLO (Norway)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

c ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ION; SILICON;

ARTICLE; CORRELATION ANALYSIS; ELECTRIC CONDUCTIVITY; IMPLANTATION; KINETICS; MODEL; PHYSICS; ROOM TEMPERATURE; SPECTROSCOPY; TEMPERATURE DEPENDENCE;

EID: 0005789938 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.65.245201 Document Type: Article

Times cited : (46)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.