-
2
-
-
0033901568
-
Theoretical analysis of the detectivity in n-p and p-n GaSb/GaInAsSb infrared photodetectors
-
Y. Tian, B. Zhang, T. Zhan, H. Jiang, and Y. Jin, "Theoretical analysis of the detectivity in n-p and p-n GaSb/GaInAsSb infrared photodetectors," IEEE Trans. Electron Devices ED-47, 554-551 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.ED-47
, pp. 544-551
-
-
Tian, Y.1
Zhang, B.2
Zhan, T.3
Jiang, H.4
Jin, Y.5
-
3
-
-
0031139603
-
y/InAs photodetectors with large quantum efficiency
-
y/InAs photodetectors with large quantum efficiency," Jpn. J. Appl. Phys. 36, 2614-2616 (1997).
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, pp. 2614-2616
-
-
Gong, X.Y.1
Yamaguchi, T.2
Kan, H.3
Makino, T.4
Iida, T.5
Kato, T.6
Aoyama, M.7
Hayakama, Y.8
Kumagawa, M.9
-
4
-
-
0033901568
-
Theoretical analysis of the detectivity in n-p and p-n GaSb/GaInAsSb infrared photodetectors
-
Y. Tian, B. Zhang, T. Zhan, H. Jiang and Y. Jin, "Theoretical analysis of the detectivity in n-p and p-n GaSb/GaInAsSb infrared photodetectors," IEEE Trans. Electron Devices ED-47, 544-551 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.ED-47
, pp. 544-551
-
-
Tian, Y.1
Zhang, B.2
Zhan, T.3
Jiang, H.4
Jin, Y.5
-
6
-
-
0035366259
-
High performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration
-
G. Masini, L. Colace, G. Assanto, H. Luan, and L. C. Kimerling, "High performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration," IEEE Trans. Electron Devices ED-48, 1092-1096 (2001).
-
(2001)
IEEE Trans. Electron Devices
, vol.ED-48
, pp. 1092-1096
-
-
Masini, G.1
Colace, L.2
Assanto, G.3
Luan, H.4
Kimerling, L.C.5
-
7
-
-
0003706310
-
-
SPIE Press, Bellingham, WA
-
A. Rogalski, K. Adamiec, and J. Rutkoswki, Narrow-Gap Semiconductor Photodiodes, SPIE Press, Bellingham, WA (2000).
-
(2000)
Narrow-Gap Semiconductor Photodiodes
-
-
Rogalski, A.1
Adamiec, K.2
Rutkoswki, J.3
-
8
-
-
0034207174
-
InAs/InAs(P,Sb) quantum-well laser structure for the mid wavelength infrared region
-
P. Christol, P. Bigenwald, A. Wilk, A. Joullie, O. Gilard, H. Carrere, F. Lozes-Dupuy, A. Behres, A. Stein, J. Kluth, K. Heime, and E. M. Skouri, "InAs/InAs(P,Sb) quantum-well laser structure for the mid wavelength infrared region," IEE Proc.: Optoelectron. 147, 181-187 (2000).
-
(2000)
IEE Proc.: Optoelectron.
, vol.147
, pp. 181-187
-
-
Christol, P.1
Bigenwald, P.2
Wilk, A.3
Joullie, A.4
Gilard, O.5
Carrere, H.6
Lozes-Dupuy, F.7
Behres, A.8
Stein, A.9
Kluth, J.10
Heime, K.11
Skouri, E.M.12
-
9
-
-
0030291755
-
Near room temperature InAsSb photodiodes: Theoretical predictions and experimental data
-
A. Rogalski, R. Ciupa, and W. Larkowski, "Near room temperature InAsSb photodiodes: Theoretical predictions and experimental data," Solid-State Electron. 39, 1593-1600 (1996).
-
(1996)
Solid-State Electron.
, vol.39
, pp. 1593-1600
-
-
Rogalski, A.1
Ciupa, R.2
Larkowski, W.3
-
10
-
-
0033720024
-
Heterostructure infrared photovoltaic detectors
-
A. Rogalski, "Heterostructure infrared photovoltaic detectors," Infrared Phys. Technol. 41, 213-218 (2000).
-
(2000)
Infrared Phys. Technol.
, vol.41
, pp. 213-218
-
-
Rogalski, A.1
-
11
-
-
0035398741
-
MBE growth of room temperature InAsSb mid-infrared detector
-
X. Marcadet, A. Rakovaska, I. Pervot, G. Glastre, B. Vinter, and V. Berger, "MBE growth of room temperature InAsSb mid-infrared detector," J. Cryst. Growth 227-228, 609-613 (2001).
-
(2001)
J. Cryst. Growth
, vol.227-228
, pp. 609-613
-
-
Marcadet, X.1
Rakovaska, A.2
Pervot, I.3
Glastre, G.4
Vinter, B.5
Berger, V.6
-
12
-
-
0000582045
-
A room temperature photovoltaic detector for the mid-infrared (1.8-3.4 μm) wavelength region
-
A. Krier, H. H. Gao, and Y. Mao, "A room temperature photovoltaic detector for the mid-infrared (1.8-3.4 μm) wavelength region," Semicond. Sci. Technol. 13, 950-956 (1998).
-
(1998)
Semicond. Sci. Technol.
, vol.13
, pp. 950-956
-
-
Krier, A.1
Gao, H.H.2
Mao, Y.3
-
13
-
-
0033097083
-
Effect of material parameters on quantum efficiency of GaInAsSb detectors
-
Y. Tian, T. Zhou, B. Zhang, H. Jiang, and Y. Jin, "Effect of material parameters on quantum efficiency of GaInAsSb detectors," Solid-State Electron. 43, 625-631 (1999).
-
(1999)
Solid-State Electron.
, vol.43
, pp. 625-631
-
-
Tian, Y.1
Zhou, T.2
Zhang, B.3
Jiang, H.4
Jin, Y.5
-
17
-
-
0000473190
-
Theoretical analysis of the Auger mechanism in GaInAsSb infrared photovoltaic detector
-
Y. Tian, Z. Tianming, T. Zhou, B. Zhang, Y. Jin, Y. Ning, H. Jiang, and G. Yuan, "Theoretical analysis of the Auger mechanism in GaInAsSb infrared photovoltaic detector," Opt. Eng. 37, 1754-1762 (1998).
-
(1998)
Opt. Eng.
, vol.37
, pp. 1754-1762
-
-
Tian, Y.1
Tianming, Z.2
Zhou, T.3
Zhang, B.4
Jin, Y.5
Ning, Y.6
Jiang, H.7
Yuan, G.8
-
18
-
-
0027559023
-
Numerical modelling of abrupt heterojunctions using a thermionic-field-emission boundary condition
-
K. Yang, J. R. East, and G. I. Haddad, "Numerical modelling of abrupt heterojunctions using a thermionic-field-emission boundary condition," Solid-State Electron. 3, 321-330 (1993).
-
(1993)
Solid-State Electron.
, vol.3
, pp. 321-330
-
-
Yang, K.1
East, J.R.2
Haddad, G.I.3
-
20
-
-
0038175740
-
Room temperature operation of InAsSb/InAsPSb photodetectors with cut-off wavelength of 4.3 μm
-
X. Y. Gong, H. Kan, T. Makino, T. Iida, Y. Gao, M. Aoyama, M. Kumagawa, and T. Yamaguchi, "Room temperature operation of InAsSb/InAsPSb photodetectors with cut-off wavelength of 4.3 μm," Jpn. J. Appl. Phys. 38, 685-686 (1999).
-
(1999)
Jpn. J. Appl. Phys.
, vol.38
, pp. 685-686
-
-
Gong, X.Y.1
Kan, H.2
Makino, T.3
Iida, T.4
Gao, Y.5
Aoyama, M.6
Kumagawa, M.7
Yamaguchi, T.8
-
21
-
-
0032679503
-
High quality InAs grown by liquid phase epitaxy using gadolinium gettering
-
H. Gao, A. Krier, and V. Shrestnev, "High quality InAs grown by liquid phase epitaxy using gadolinium gettering," Semicond. Sci. Technol. 14, 441-445 (1999).
-
(1999)
Semicond. Sci. Technol.
, vol.14
, pp. 441-445
-
-
Gao, H.1
Krier, A.2
Shrestnev, V.3
|