Room temperature InAsxP1-x-ySby/InAs photodetectors with high quantum efficiency

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 5 A, 1997, Pages 2614-2616

  Gong, XiuYing ^a   Yamaguchi, Tomuo ^b   Kan, Hirofumi ^a   Makino, Takamitsu ^a   Iida, Takefumi ^a   Kato, Takayoshi ^b   Aoyama, Mitsuru ^b   Hayakawa, Yasuhiro ^b   Kumagawa, Masashi ^b  

^a CENTRAL RESEARCH LABORATORY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Detectivity; InAsPSb; Liquid phase epitaxy; Photodetector; Quantum efficiency; Responsivity

Indexed keywords

DETECTIVITY; INDIUM ARSENIDE; RESPONSIVITY;

ENERGY GAP; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

PHOTODETECTORS;

EID: 0031139603     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2614     Document Type: Article

References (8)

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