Numerical analysis of the detectivity in n+-n-p and p+-p-n GaInAsSb infrared detectors

Solid-State Electronics

Volumn 43, Issue 10, 1999, Pages 1879-1891

  Tian, Yuan ^a   Zhang, Baolin ^a   Zhou, Tianming ^a   Jiang, Hong ^a   Jin, Yixin ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; NUMERICAL ANALYSIS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS;

SURFACE RECOMBINATION VELOCITY;

INFRARED DETECTORS;

EID: 0033353267     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00049-0     Document Type: Article

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