High quality InAs grown by liquid phase epitaxy using gadolinium gettering

Semiconductor Science and Technology

Volumn 14, Issue 5, 1999, Pages 441-445

  Gao, H H ^a   Krier, A ^a   Sherstnev, V V ^a,b  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; GADOLINIUM; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTOR GROWTH;

FULL-WIDTH AT HALF-MAXIMUM (FWHM); GADOLINIUM GETTERING; INDIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032679503     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/5/012     Document Type: Article

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