LnAs/lnAs(P,Sb) quantum-well laser structure for the midwavelength infrared region

IEE Proceedings: Optoelectronics

Volumn 147, Issue 3, 2000, Pages 181-187

  Christol, P ^a   Bigenwald, P ^a   Wilk, A ^a  

^a UNIVERSITY OF AVIGNON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); COMPOSITION EFFECTS; ELECTROLUMINESCENCE; ENERGY GAP; INFRARED RADIATION; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

METAL-ORGANIC VAPOR PHASE DEPOSITION; MIDWAVELENGTH INFRARED REGIONS;

QUANTUM WELL LASERS;

EID: 0034207174     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20000479     Document Type: Article

References (37)

1. ZHANG, Y.H., MILES, R.IL, and CHOW, D.H.: 'InAs-InAs(Sb,_, typc-II superlattice midwavc infrared lasers grown on InAs substrates', IEEEJ. Select. Topics Quantum Electron., f995, I, (2), pp. 749-756
2. ZHANG, Y.H.: 'Continuous wave operation of InAs/lnAs,Sb|_, midinfrarcd lasers', Appl. Plivs. Lett., 1995, 66, (2), pp. 118-120
3. KURTZ, S.R., BIEFELD, R.M., ALLERMAN. A.A., HOWARD, A.J., HOWARD, A.J., CRAWFORD, M.H., and PELCZYNSKI, M.W.: 'Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 urn', Appl. P/ivs. Lett., 1996, 68, (10), pp. 1332-1334
4. LANE, B., WU, D., RYBALTOWSKI, A., YI, H., DIAZ, J., and RAZEGH1, M.: 'Compressively strained multiple quantum well InAsSb lasers emitting at 3.6/mi grown by metal-organic chemical vapor deposition', Appl. Pins, Lett., 1997, 70, (4), pp. 443-145
5. RAZEGHI, M.: 'Hiah power InAsSb/lnAsSbP laser diodes emitting at 3-5 /im raime', SP1E, 1997, 2997, pp. 14-24
6. KURTZ, S.R., ALLERMAN, A.A., and BIEFELD, R.M.: 'Midinfrared lasers and ligth-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions', Appl. Phvs. Lett., 1997, 70, (24), pp. 3188-3190
7. BIEFELD, R.M., KURTZ, S.R., and ALLERMAN, A.A.: "The metalorganic chemical vapor deposition growth and properties of InAsSb mid-infrared (3-6/mi) lasers and LEDs', IEEE J. Select. Topics Quantum Electron., 1997, 3, (3), pp. 739-748
8. LANE, B., WU, Z., STEIN, A., DIAZ, J., and RAZEGHI, M.: 'InAsSb' InAsP strained-layer superlattice injection lasers operating at 4.0/im grown by metal-organic chemical vapor deposition', Appl. Plivs. Lett., 1999, 74, (23), ppr343S-3440
9. RAZEGHI, M.: 'Midi power InAsSb/lnAsSbP laser diodes emitting at 3-5/mi range', SPIE, 1997, 2997, pp. 14-24
10. YI, H., RYBALTOWSKI, A., DIAZ, J., WU, D.. LANE, B., XIAO, Y, and RAZEGHI, M.: 'Stability of far fields in double heterostructure and multiple quantum well InAsSb.'InPAsSb'InAs midinfrared lasers', Appl. Plivs. Lett., 1997, 70, (24), pp. 3236-3238
11. POPOV, A., SHERSTNEV, V, YAKOVLEV, Y, MUECKE, R., and WERLE, P.: 'Continuous-wave high-power diode lasers for the 3 /mi wavelengths', SP/E, 1997, 3001, p"p. 344-355
12. RAM-MOHAN, L.R., and MEYER, J.R.: 'Multiband finite clement modeling of wavefunction-engincered electro-optical devices', J. Nonlinear Opt. P/ivs. Mater., 1995, 4, (1), pp. 191-243
13. MEYER, J.R., OLAFSEN, L.J., and A1FER, E.H.: 'Type-II W, interband cascade and vertical-cavity surface-emitting mid-IR lasers', IEE Proc.-Optoelectivn., 1998, 145, (5), pp. 275-280
14. LEE, H., OLAFSEN, L.J., and MENNA, R.J.: 'Room-temperature type-II quantum well diode laser with broadened waveguide emitting at ;. = 3.30/mi', Electron. Lett., 1999, 35, (20), pp. 1793-1795
15. OLAFSEN, L.J., AIFER, E.H., VURGAFTMAN, L, BEWLEY, W.W., FELIX, C.L., MEYER, J.R., ZHANG, D., LIN, C.-IL, and PEI, S.S.: 'Near-room-teniperature mid-infrared interband cascade laser', Appl. Pln-s. Lett, 1998, 72, (19), pp. 2370-2372
16. WÉI, S.U., and ZUNGER, A.: 'InAsSb/InAs: a type-I or a type-II band alignment', Plivs. Rev. B, 1995, 52, (16), pp. 12039-12044
17. TANG, P.J., PÜLLIN, M.J., LI, Y.B., PHILLIPS, C.C., STRADLING, R.A., CHUNG, S.J., YUEN, W.T., HART, L., BAIN, D.J., and GALBRAITH, I.: 'A magneto-photoluniinescence investigation of the band offset between InAs and arsenic-rich InAs,_rSbt alloys'. Appl. Plivs. Lett., 1996, 69, (17), pp. 2501-2503
18. is LI, Y.B.,"BAIN, D.J., HART, L., LIVINGSTONE, M.,CIESLA,CM.,
19. PULLIN, M.J., TANG, P.J.P., YUEN, W.T., GALBRAITH, L, PHILLIPS, C.C., PIDGEON, C.R., and STRADLING, R.A.: 'Band alignment in In(As,Sb)'InAs superlattices', Plivs. Ke\: B, 1997, 55, (7), pp. 4589-4595
20. KURTZ, S.R., and BIEFELD, R.M.: 'Magnetophotoluminescence of biaxially compressed InAsSb quantum wells', Appl. Phvs. Lett., 1995, 66, (3), pp. 364-366
21. KURTZ, S.R., DAWSON, L.R., BIEFELD, R.M., FOLLSTAEDT, D.M., and BAUCOM, K.C.: 'Orderina-induced band gap reduction in InAs, ..jSb.Ct' 0.4) alloys and superlattices', Phvs. Rev. B, I992, 46, (3), pp. 1909-1912
22. FOLLSTAEDT, D.M., BIEFELD, R.M., KURTZ, S.R., and BAUCOM, K.C.: 'Microstructures of InAs,_JSb,(.v = 0.07-0.14) alloys and strained-layer superlattices', J. Electron. Mater., 1995, 24, (7), pp. 819-825
23. BEHRES, A., PUTTIER, D., and HEIME, K.: 'Low-pressure metal organic vapour-phase epitaxy and characterization of strained InAs(P)' InAsSb superlattices for infrared emitters', J. Ciystul Givu-lh, 1998, 195, pp. 373-377
24. STEIN, A., BEHRES, A., HEIME, K., WILK, A., CHRISTOL, P.. JOULLIÉ, A., BROZICEK, M., IIULICIUS, E., SIMECEK, T., RUSHWORTH, S., SMITH, L., and RAVETZ, M.: 'InAs(P,Sb)' InAsSb LEDs emitting in the 3-4/mi range at room temperature'. Proceeding of 11th International Conference on Indium Phosphide and Related Materials, 16-20 May 1999, Davos, pp. 95-98
25. FOBELETS, K., VOUNCKX, R., and BORGHS, G.: 'Matrix formal-ism for the triple-band effective-mass equation', Sfinicoml. Sei. Techno!., 1993, X, pp. 1815-1821
26. CHRISTOL, P., B1GENWALD, P., JOULLIÉ, A., CUMINAL. Y., BARANOV, A.N.. BERTRU, N., and ROUILLARD, Y.: 'Improvement of Sh-bascd multiquantum well lasers bv coulomb enhancement', 1EE. Pmc-Optoelccimn, 1999, 146. (I), pp. 3-8
27. KRIJN, M.: ". Semicoml. Sei. Techno!., 1991, 6, pp. 27-31
28. TSOU, Y, ICHII, A., and GARMIRE, E.M.: 'Improving InAs double heteroslructure lasers with better confinement', IEEE J. Quantum Eleclmn., 1992, 28, (5), pp. 1261-1268
29. VAN DE WALLE, C.G.: 'Band lineups and deformation potentials in the model-solid theory', Pln-s. Rc\: B, 19S9, 39, (3). pp. 1871-1883
30. TANG, P.J.P., HARDAWAY, H., HEBER, J.. PHILLIPS, C.C., PULLIN, M.J., STRADLING, R.A., YD EN. W.T., and HART. L.: 'Efficient 300 V liht-emittiim diodes at J. = 5 and J. =s 8 /im from InAs' In(As,_,Sbv) sinsie quantum wells', Appl. Plivs. Leu., I99S, 72. (26), pp. 3473-3475
31. STEIN, A.. PÜTTJER, D., BEIIRES, A., and HEIME, K.: 'Room temperature InPSb. InAs and InPSb.'InAs. InAsSb mid-infrared emitting diodes crown by MO\'PE'. IEE. Pivc-Optaelectnm, 199S, 145, pp. 257-260
32. GARBUZOV, D.Z., MARTINELLI, R.U, LEE, M.. YORK, P.K., MENNA, R.J., CON'NOLLY, J.C., and NARAYAN, S.: 'Ultralow-loss broadened-waveguide high-power 2 fim AlGaAsSb/InGaAsSb.'GaSb separate-confinement quantum-well laser', Appl. Phys. Lett., 1996, 69, (14), pp. 2006-2008
33. AHN, D., and CHUANG, S.L.: 'Optical gain and gain suppression of quantum-well lasers with valence band mixing', IEEE J. Quantum Electron., 1990, 26, (1), pp. 13-24
34. TAKAGI, T.: 'Dispersion parameters of the refractive index in II1-V compound scmiconducteurs', Japan J. Appl. P/ivs., 1982, 21, (3), pp. L167-L169
35. CIESLA, C.M., MURDIN, B.N., PIDGEON, C.R., STRADL1KG, R.A., PHILLIPS, C.C., LIVINGSTONE, M., GALBRAITH, I., JAROSZYNSKI, D.A., LANGERAK, C.J., TANG, P.J., and PULLIN, M.J.: 'Suppression of Auger recombination in arsenic-rich InAs,_tSbv strained layer super-lattices', J. Appl. Pins., 1996, 80, (5), pp. 2994-2997
36. KIM, S., ERDTMANN, M., \VU, D., KASS, E., YI, H., DIAZ, J., and RAZEGHI, M.: 'Photoluminescence study of InAsSb/InAsPSb heterostaictures crow n by low-pressure metalorganic chemical vapor deposition', Appl P/n-s. Lett., 1996, 69, (II), pp. 1614-1616
37. LINDLE, J.R.', MEYER, J.R., HUFFMAN, CA., BARTOLI, F.J., TURNER, G.W., and CHOI, U.K.: 'Auger lifetime in InAs, InAsSb, and InAsSb-InAlAsSb quantum wells', Appl. Pins. Lett., 1995, 67, (21), pp. 3153-3155