Theoretical analysis of the detectivity in N-p and P-n GaSb/GalnAsSb infrared photodetectors

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 544-552

  Tian, Yuan ^a   Zhang, Baolin ^a   Zhou, Tianming ^a   Jiang, Hong ^a   Jin, Yixin ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; HETEROJUNCTIONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ZERO-BIAS RESISTANCE-AREA PRODUCT;

INFRARED DETECTORS;

EID: 0033901568     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824726     Document Type: Article

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