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Volumn 13, Issue 8, 1998, Pages 950-956

A room temperature photovoltaic detector for the mid-infrared (1.8-3.4 μm) wavelength region

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EID: 0000582045     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/8/021     Document Type: Article
Times cited : (35)

References (20)
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    • Epitaxx
    • Epitaxx High sensitivity 2.5 μm cutoff wavelength InGaAs photodiodes ETX-GR Series (Epitaxx) pp 4-94
    • ETX-GR Series , pp. 4-94
  • 5
    • 15944382399 scopus 로고    scopus 로고
    • Indium arsenide detector operating notes (Montgomeryville, USA)
    • EG & G Judson Infrared Detectors Catalogue 1998 Indium arsenide detector operating notes (Montgomeryville, USA) pp 14-17
    • EG & G Judson Infrared Detectors Catalogue 1998 , pp. 14-17
  • 6
    • 0001017879 scopus 로고
    • Thermal generation currents in hydrogenated amorphous silicon p-i-n structures
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  • 7
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    • Change in electrical device characteristic during the in situ formation of dislocation
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    • (1992) Appl. Phys. Lett. , vol.62 , pp. 1426-1428
    • Ross, F.M.1    Hull, R.2    Bahnck, D.3    Bean, J.C.4    Peticolas, L.J.5    King, C.A.6
  • 8
    • 0001726439 scopus 로고
    • Effect of the misfit dislocations on the leakage currents in strained multiquantum well structure
    • Daxid J P R, Chen Y H, Grey R, Hill G and Robson P N 1995 Effect of the misfit dislocations on the leakage currents in strained multiquantum well structure Appl. Phys. Lett. 67 906-8
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 906-908
    • Daxid, J.P.R.1    Chen, Y.H.2    Grey, R.3    Hill, G.4    Robson, P.N.5
  • 12
    • 0028761142 scopus 로고
    • Liquid phase epitaxial growth and photoluminescence of Mn-doped InGaAs with InAs-enriched composition
    • Parry M K and Krier A 1994 Liquid phase epitaxial growth and photoluminescence of Mn-doped InGaAs with InAs-enriched composition J. Cryst. Growth 139 238-46
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    • Efficient 3.3 μm light emitting diodes for detecting methane gas at room temperature
    • Parry M K and Krier A 1994 Efficient 3.3 μm light emitting diodes for detecting methane gas at room temperature Electron. Lett. 30 1968-9
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    • Parry, M.K.1    Krier, A.2
  • 15
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    • 0.44/InAs light emitting diodes for HF detection
    • at press
    • 0.44/InAs light emitting diodes for HF detection IEE Proc. Optoelectron. at press
    • (1997) IEE Proc. Optoelectron.
    • Mao, Y.1    Krier, A.2
  • 20
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    • KIRDOOO1EO5 for typical performance characteristics of commercially available CdHgTe detectors (Japan: Hamamatsu Photonics)
    • See, for example, 1998 Hamamatsu Infrared Detectors Catalogue KIRDOOO1EO5 for typical performance characteristics of commercially available CdHgTe detectors (Japan: Hamamatsu Photonics)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.