Long-wavelength infrared photodetectors based on InSbBi grown on GaAs substrates

Applied Physics Letters

Volumn 71, Issue 16, 1997, Pages 2298-2300

  Lee, J J ^a   Kim, J D ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRONS; ENERGY GAP; FABRICATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION;

BAND GAP; CARRIER LIFETIME; INFRARED ABSORPTION; JOHNSON NOISE LIMITED DETECTIVITY; LONG WAVELENGTH INFRARED PHOTODETECTOR; NOMARSKI DIFFERENTIAL INTERFERENCE CONTRAST MICROSCOPY; RESPONSIVITY;

PHOTODETECTORS;

EID: 0031245136     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120429     Document Type: Article

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