InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal-organic chemical-vapor deposition

Applied Physics Letters

Volumn 70, Issue 1, 1997, Pages 40-42

  Diaz, J ^a   Yi, H ^a   Rybaltowski, A ^a   Lane, B ^a   Lukas, G ^a   Wu, D ^a   Kim, S ^a   Erdtmann, M ^a   Kaas, E ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000202295     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119298     Document Type: Article

References (17)

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