Long-wavelength InAsSb photoconductors operated at near room temperatures (200-300 K)

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 99-101

  Kim, J D ^a   Wu, D ^a   Wojkowski, J ^a   Piotrowski, J ^a   Xu, J ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DIFFUSION; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; X RAY DIFFRACTION;

BLACKBODY SOURCE; CARRIER RECOMBINATION; ELECTRON MOBILITY LIFETIME; INDIUM ARSENIC ANTIMONIDE; JOHNSON NOISE; SPECTRAL RESPONSE;

PHOTODETECTORS;

EID: 0029770871     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116784     Document Type: Article

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