-
1
-
-
0034188028
-
1-xAs quantum wells
-
1-xAs quantum wells", J. Vac. Sc. & Technol. B, 48, 1496-1501, 2000.
-
(2000)
J. Vac. Sc. & Technol. B
, vol.48
, pp. 1496-1501
-
-
Stintz, A.1
Liu, G.T.2
Gray, A.L.3
Spillers, R.4
Delgado, S.M.5
Malloy, K.J.6
-
3
-
-
0037577761
-
Effect of strain on surface morphology in highly strained InGaAs films
-
C. W. Snyder, B. G. Orr, D. Kessler, and L. M. Sander, "Effect of strain on surface morphology in highly strained InGaAs films", Phys. Rev. Lett. 66, 3032-3035, 1991.
-
(1991)
Phys. Rev. Lett.
, vol.66
, pp. 3032-3035
-
-
Snyder, C.W.1
Orr, B.G.2
Kessler, D.3
Sander, L.M.4
-
4
-
-
0028499029
-
Low threshold, large T-O injection-laser emission from (InGa)As quantum dots
-
4. N. Kirstaedter, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, S. S. Ruvimov, M. V. Maximov, P. S. Kop ev, Zh. I. Alferov, U. Richter, P. Werner, U. Gosele, and J. Heydenreich, "Low threshold, large T-O injection-laser emission from (InGa)As quantum dots", Electron. Lett. 30, 1416-1417, 1994.
-
(1994)
Electron. Lett.
, vol.30
, pp. 1416-1417
-
-
Kirstaedter, N.1
Ledentsov, N.N.2
Grundmann, M.3
Bimberg, D.4
Ustinov, V.M.5
Ruvimov, S.S.6
Maximov, M.V.7
Kopev, P.S.8
Alferov, Zh.I.9
Richter, U.10
Werner, P.11
Gosele, U.12
Heydenreich, J.13
-
5
-
-
0030217389
-
Room temperature lasing from InGaAs quantum dots
-
R. Mirin, A. Gossard, and J. Bowers, "Room temperature lasing from InGaAs quantum dots", Electron. Lett. 32, 1732-1734, 1996.
-
(1996)
Electron. Lett.
, vol.32
, pp. 1732-1734
-
-
Mirin, R.1
Gossard, A.2
Bowers, J.3
-
6
-
-
0032490759
-
Lasing with low-threshold current and high output power from columnar-shaped InGa/GaAs quantum dots
-
K. Mukai, Y. Nakata, H. Shoji, M. Sugawara, K. Ohtsubo, N. Yokoyama, and H. Ishikawa, "Lasing with low-threshold current and high output power from columnar-shaped InGa/GaAs quantum dots", Electron. Lett. 34, 1588-1590, 1998.
-
(1998)
Electron. Lett.
, vol.34
, pp. 1588-1590
-
-
Mukai, K.1
Nakata, Y.2
Shoji, H.3
Sugawara, M.4
Ohtsubo, K.5
Yokoyama, N.6
Ishikawa, H.7
-
7
-
-
0031996455
-
1.15 μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser
-
D. L. Huffaker, H. Deng, and D. G. Deppe, "1.15 μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser", IEEE Photon. Technol. Lett. 10, 185-187, 1998.
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, pp. 185-187
-
-
Huffaker, D.L.1
Deng, H.2
Deppe, D.G.3
-
8
-
-
0030288960
-
Room-temperature lasing operation of a quantum-dot vertical-cavity surface emitting laser
-
H. Saito, K. Nishi, I. Ogura, S. Sugou, and Y. Sugimoto, "Room-temperature lasing operation of a quantum-dot vertical-cavity surface emitting laser", Appl. Phys. Lett. 69, 3140-3142, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 3140-3142
-
-
Saito, H.1
Nishi, K.2
Ogura, I.3
Sugou, S.4
Sugimoto, Y.5
-
9
-
-
0031108828
-
InGaAs-GaAs quantum-dot lasers
-
D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh.I. Alferov, P. S. Kop ev, and V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers", IEEE J. Select. Top. Quantum Electron. 3, 196-205, 1997.
-
(1997)
IEEE J. Select. Top. Quantum Electron
, vol.3
, pp. 196-205
-
-
Bimberg, D.1
Kirstaedter, N.2
Ledentsov, N.N.3
Alferov, Zh.I.4
Kopev, P.S.5
Ustinov, V.M.6
-
10
-
-
0032689040
-
0.85As
-
0.85As", Electron. Lett. 35, 1163-1165, 1999.
-
(1999)
Electron. Lett.
, vol.35
, pp. 1163-1165
-
-
Liu, G.T.1
Stintz, A.2
Li, H.3
Malloy, K.J.4
Lester, L.F.5
-
12
-
-
0030822402
-
Cathodoluminescence study of GaAs quantum wells and of submicron dots fabricated by magnetron reactive ion etching
-
L.-L. Chao, G. S. Cargill III, M. Levy, R. M. Osgood, Jr., and G. F. McLane, "Cathodoluminescence study of GaAs quantum wells and of submicron dots fabricated by magnetron reactive ion etching", Appl. Phys. Lett. 70, 408-410,1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 408-410
-
-
Chao, L.-L.1
Cargill G.S. III2
Levy, M.3
Osgood R.M., Jr.4
McLane, G.F.5
-
14
-
-
0032185888
-
Diffusion lengths of carriers in n- and p-type ZnMgSSe cladding layers of green laser diodes
-
E. Snoeks, T. Marshall, J. Petruzzello, M. D. Pashley, L.-L. Chao, and G. S. Cargill III, Jr., "Diffusion lengths of carriers in n- and p-type ZnMgSSe cladding layers of green laser diodes", J. Appl. Phys. 84, 3611-3616, 1998.
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 3611-3616
-
-
Snoeks, E.1
Marshall, T.2
Petruzzello, J.3
Pashley, M.D.4
Chao, L.-L.5
Cargill Iii G.S., Jr.6
-
15
-
-
0141859298
-
Lateral transport in GaAs/AlGaAs quantum wells
-
D. Araujo, G. Oelgart, J.-D. Ganiere, F. K. Reinhart, " Lateral transport in GaAs/AlGaAs quantum wells ", Appl. Phys. Lett. 62, 2992-2994, 1993.
-
(1993)
Appl. Phys. Lett.
, vol.62
, pp. 2992-2994
-
-
Araujo, D.1
Oelgart, G.2
Ganiere, J.-D.3
Reinhart, F.K.4
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