Cathodoluminescence study of GaAs quantum wells and of submicron dots fabricated by magnetron reactive ion etching

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 408-410

  Chao, L L ^a   Cargill III, G S ^a   Levy, M ^a   Osgood Jr , R M ^a   McLane, G F ^b  

^a Och Spine at New York Presbyterian Hospitals   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CATHODOLUMINESCENCE; DIFFUSION; ELECTRON BEAMS; GOLD; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM GALLIUM ARSENIDE; CARRIER DIFFUSION LENGTH; FEATURE SIZE EFFECTS; SIDEWALL DAMAGE; SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030822402     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119124     Document Type: Article

References (12)

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12. Note that large spectral shifts suggesting band bending for features with much smaller dimensions have been reported using broad area CL measurements by J. A. Lebens, C. S. Tsai, K. J. Vahala, and T. F. Kuech, Appl. Phys. Lett. 56, 2642 (1990). Smaller but significant spectral shifts were reported in PL measurements in Ref. 2 using PL for the same sample dimensions as reported in the present work.