Diffusion lengths of carriers in n- and p-type ZnMgSSe cladding layers of green laser diodes

Journal of Applied Physics

Volumn 84, Issue 7, 1998, Pages 3611-3616

  Snoeks, E ^a,c   Marshall, T ^a   Petruzzello, J ^a   Pashley, M D ^a   Chao, L L ^b,d   Cargill III, G S ^b,d  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b Och Spine at New York Presbyterian Hospitals   (United States)

^c FOM INSTITUTE AMOLF   (Netherlands)

^d Lehigh University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CLADDING (COATING); CRYSTAL IMPURITIES; DIFFUSION; ELECTRON BEAMS; ELECTROOPTICAL EFFECTS; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

CATHODOLUMINESCENCE MICROSCOPY; FOCUSED ELECTRON BEAM;

SEMICONDUCTOR LASERS;

EID: 0032185888     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368819     Document Type: Article

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