22 nm lithography using near field x-rays

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5037 II, Issue , 2003, Pages 622-633

  Bourdillon, Antony J ^a   Williams, Gwyn P ^b   Vladimirsky, Yuli ^a   Boothroyd, Chris B ^c  

^a UhrlMasc Inc   (United States)

^b THOMAS JEFFERSON NATIONAL ACCELERATOR FACILITY   (United States)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Demagnification by bias; Near field; PXL; Ultra high resolution lithography

Indexed keywords

COMPUTER SIMULATION; DIFFRACTION; IMAGING SYSTEMS; MASKS; MICROPROCESSOR CHIPS; PHOTORESISTS; SILICON WAFERS; SUBSTRATES;

DEMAGNIFICATION; FRESNEL DIFFRACTION; OPTICAL FIELD; PROXIMITY X RAY LITHOGRAPHY; ULTRA HIGH RESOLUTION LITHOGRAPHY;

X RAY LITHOGRAPHY;

EID: 0141724705     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.484989     Document Type: Conference Paper

References (22)

1. Bourdillon A J, Boothroyd C B, Kong J R and Vladimirsky Y, J.Phys.D: Appl.Phys. 33 (2000) 1-9
2. Vladimirsky Y, Bourdillon A J, Vladimirsky O, Jiang W and Leonard Q J.Phys.D: Appl. Phys. 32 (1999) L114-L118
3. Kong J R, Vladimirsky Y and Quinn L, Proc. MNE 2000, Jena Sep 18-21, Germany
4. Kong J R, and Quinn L, Vladimirsky Y and Bourdillon A (2000), Proc SPIE Microlithography 2000, Santa Clara 27 Feb-3 March
5. Y Vladimirsky and AJ Bourdillon US Patent Nr. 6,383,698 (2002)
6. Solid State Technology, February 2000, News Item, pp 18-23
7. Neureuther A R, "Microlithography with soft X-rays" in Synchrotron Radiation Research, ed. Winich H and Doniach S, Plenum
8. Vladimirsky Y "Lithography", Ch. 10 in Vacuum Ultraviolet Spectroscopy II, pp. 205-223; Eds. J.A.Samson and D.L.Ederer, (Experimental Methods in the Physical Sciences, Vol. 32, Academic Press, 1998)
9. Cerrina, F, "X-Ray Lithography", Ch. 3 in Handbook of Microlithography, Micromachining, and Microfabrication, Vol.1, ed. P.Rai-Choudhury, pp. 253-319 (SPIE Press, Bellingham, Washington, USA, 1997)
10. Krasnoperova A A, Rippstein R, Flamholz A, Kratchmer E, Wind S, Brooks C and Lercel M, Proc SPIE conf. vol. 3676, pp. 24-39 (1999)
11. Vladimirsky Y, "Introduction: limits or limitations" in Proc SPIE conf. Vol 3676, pp. xvi-xvii (1999)
12. Bourdillon A J and Boothroyd C B (2001) J.Phys.D: Appl. Phys. 2001 34 3209-3213
13. Yang L, Taylor JW, J Vac Sci & Technol B 19 129-135 (2001)
14. Khan M, Han G, Bollepalli SB, Cerrina F and Maldonado J, J Vac Sci & Technol B 17 3426-3432 (2000)
15. Khan M, Han G, Tsvid G, Kitayama T, Maldonado J and Cerrina F, J Vac Sci & Technol B 19 2423-2427 (2002)
16. Vladimirsky O, Dandekar N, Jiang W, Leonard Q, Simon K BollepalliS, Valdimirsky Y and Taylor JW (1999) Proc SPIE Conf. vol 376 92
17. Jenkins F A and White HE, Fundamentals of Optics, 4th ed. McGraw-Hill 1976
18. Saxton W O, Pitt T J and Horner M (1979) Ultramicroscopy, 4, 343
19. Early K, Schattenburg M L and Smith H I, Microelectronic Enginering 11 (1990) 317-321
20. Chen et al. J Vac Sci & Technol B 16 3521-3525 (1998)
21. H.I. Smith, Japan could dominate industry with X-ray Lithography, Semiconductor International Vol 24, No. 2 pp 67-72 (2001).
22. Turcu I C E, Gaeta C J, Forber R A, Rieger H, Cassidy K L, Campeau S M, Hark P, Maldonado J R, Morris J H, Carosella J H, Smith H, Lim M, Chen Z, Burdett J, Gibson D M, Whitlock R R and Dozier C M, Proc SPIE Microlithography 2003, vol 5037, Feb. 23-27, to be published.