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1
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0034316170
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Patterning performance of EB-X3 x-ray mask Writer
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Nov./Dec.
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S. Ohki, T. Watanabe, Y. Takeda, T. Morosawa, K. Saito, T. Kunioka, J. Kato, A. Shimizu, T. Matsuda, "Patterning performance of EB-X3 x-ray mask Writer," J. Vac. Sci. Technol. B, vol. 18, p. 3084-3088 (Nov./Dec. 2000)
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J. Vac. Sci. Technol. B
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Ohki, S.1
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Takeda, Y.3
Morosawa, T.4
Saito, K.5
Kunioka, T.6
Kato, J.7
Shimizu, A.8
Matsuda, T.9
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2
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0033272491
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T. Morosawa, K. Saito, Y. Takeda, T Kunioka, A. Shimizu, I. Kato, T. Matsuda, Y. Kuriyama, Y. Nakayama, Y. Matsui, J. Vac. Sci. Technol. B, vol. 17, p. 2907 (1999).
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(1999)
J. Vac. Sci. Technol. B
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, pp. 2907
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Morosawa, T.1
Saito, K.2
Takeda, Y.3
Kunioka, T.4
Shimizu, A.5
Kato, I.6
Matsuda, T.7
Kuriyama, Y.8
Nakayama, Y.9
Matsui, Y.10
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3
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6644221354
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Advances in PXL technology at ASET
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Yokohama, Japan, Nov. 13-14
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Y. Matsui, "Advances in PXL technology at ASET," Digest of Papers XEL 2000, Yokohama, Japan, Nov. 13-14, 2000.
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(2000)
Digest of Papers XEL 2000
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Matsui, Y.1
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4
-
-
0033271272
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Magnification correction by changing wafer temperature in proximity x-ray lithography
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H. Aoyama, S. Mitsui, T. Taguchi, Y. Tanaka, Y. Matsui, M. Fukuda, M Suzuki, T. Haga, H. Morita, "Magnification correction by changing wafer temperature in proximity x-ray lithography," J. Vac. Sci. Technol. B, vol. 17, p. 3411-3414 (1999).
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(1999)
J. Vac. Sci. Technol. B
, vol.17
, pp. 3411-3414
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Aoyama, H.1
Mitsui, S.2
Taguchi, T.3
Tanaka, Y.4
Matsui, Y.5
Fukuda, M.6
Suzuki, M.7
Haga, T.8
Morita, H.9
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5
-
-
0034583907
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Feasibility study using 4-Gb DRAM patterns
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Yokohama Japan, Nov. 13-14
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K. Suzuki, "Feasibility study using 4-Gb DRAM patterns," Digest of Papers XEL 2000. Yokohama Japan, Nov. 13-14, 2000; K. Suzuki and Y. Matsui, "Advances in x-ray lithography at ASET," J. Photopolymer Sci. and Technol., vol. 13, no. 3, p. 373-378 (2000).
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(2000)
Digest of Papers XEL 2000
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Suzuki, K.1
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6
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0034583907
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Advances in x-ray lithography at ASET
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K. Suzuki, "Feasibility study using 4-Gb DRAM patterns," Digest of Papers XEL 2000. Yokohama Japan, Nov. 13-14, 2000; K. Suzuki and Y. Matsui, "Advances in x-ray lithography at ASET," J. Photopolymer Sci. and Technol., vol. 13, no. 3, p. 373-378 (2000).
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(2000)
J. Photopolymer Sci. and Technol.
, vol.13
, Issue.3
, pp. 373-378
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-
Suzuki, K.1
Matsui, Y.2
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7
-
-
6644223191
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Fabrication of NIST-format x-ray masks with 4Gb DRAM patterns
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Y. Tanaka, K. Fujii, K. Suzuki, S. Tsuboi, T. Iwamoto, Y. Matsui, "Fabrication of NIST-format x-ray masks with 4Gb DRAM patterns," to be presented at Photomask Japan 2001.
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(2001)
Photomask Japan
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-
Tanaka, Y.1
Fujii, K.2
Suzuki, K.3
Tsuboi, S.4
Iwamoto, T.5
Matsui, Y.6
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8
-
-
0034763981
-
Overlay and Critical Dimension Control in 100 nm ULSI Processes Using TaBN X-ray Masks and the XRA X-ray Stepper
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K. Fujii, Y. Tanaka, K. Suzuki, S. Tsuboi, T. Iwamoto, H. Sumitani, T. Taguchi, Y. Matsui, "Overlay and Critical Dimension Control in 100 nm ULSI Processes Using TaBN X-ray Masks and the XRA X-ray Stepper," to be presented at SPIE Microlithography 2001,
-
(2001)
SPIE Microlithography
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-
Fujii, K.1
Tanaka, Y.2
Suzuki, K.3
Tsuboi, S.4
Iwamoto, T.5
Sumitani, H.6
Taguchi, T.7
Matsui, Y.8
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9
-
-
0034431228
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Sub-100-nm Device Fabrication Using Proxinuty X-Ray Lithography at Five Levels
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Dec.
-
Y. Iba et al., "Sub-100-nm Device Fabrication Using Proxinuty X-Ray Lithography at Five Levels," Jpn J Appl Phys, Vol 39, part 1, no 12B, p 173-177 (Dec. 2000).
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(2000)
Jpn J Appl Phys
, vol.39
, Issue.PART 1 AND NO 12B
, pp. 173-177
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Iba, Y.1
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10
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-
0002800610
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Current status of AURORA-2S and a PXL beam line
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Yokohama, Japan. Nov 13-14.
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T. Miyatake, "Current status of AURORA-2S and a PXL beam line," Digest of Papers XEL 2000, Yokohama, Japan. Nov 13-14. 2000.
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(2000)
Digest of Papers XEL 2000
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Miyatake, T.1
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11
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0033308388
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Optimum phase condition for low-contrast x-ray masks
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Dec
-
K Fujii, K. Suzuki, Y. Matsui, "Optimum phase condition for low-contrast x-ray masks," Jpn J. Appl. Phys, Vol. 38, part 1, no 12B, p 7076-7079(Dec 1999).
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(1999)
Jpn J. Appl. Phys
, vol.38
, Issue.PART 1 AND NO 12B
, pp. 7076-7079
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Fujii, K.1
Suzuki, K.2
Matsui, Y.3
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12
-
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0034314799
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Proposal for a 50 nm proxinuty x-ray lithography system and extension to 35 nm by resist material selection
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Nov./Dec
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T Kitayama, K. Itoga, Y. Watanabe, S. Uzawa, "Proposal for a 50 nm proxinuty x-ray lithography system and extension to 35 nm by resist material selection," J. Vac. Sci. Technol. B, vol. 18, p. 2950-2954 (Nov./Dec 2000).
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J. Vac. Sci. Technol. B
, vol.18
, pp. 2950-2954
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Kitayama, T.1
Itoga, K.2
Watanabe, Y.3
Uzawa, S.4
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13
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6644230379
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A CoO Consideration on NGL Technologies
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Yokohama, Japan, Nov. 13-14
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Y. Gomei. "A CoO Consideration on NGL Technologies," Digest of Papers XEL 2000, Yokohama, Japan, Nov. 13-14, 2000.
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(2000)
Digest of Papers XEL 2000
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Gomei, Y.1
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14
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6644221656
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SAL X-ray Lithography System Printing 125 nm Features at Sanders
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May/June See also www.xravlitho.com
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"SAL X-ray Lithography System Printing 125 nm Features at Sanders," Compound Semiconductors. May/June 2000, p. 27-28. See also www.xravlitho.com.
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(2000)
Compound Semiconductors
, pp. 27-28
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