메뉴 건너뛰기




Volumn 24, Issue 2, 2001, Pages

Japan could dominate industry with X-ray lithography

Author keywords

[No Author keywords available]

Indexed keywords

MOORE'S LAW;

EID: 6644223778     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (14)
  • 3
    • 6644221354 scopus 로고    scopus 로고
    • Advances in PXL technology at ASET
    • Yokohama, Japan, Nov. 13-14
    • Y. Matsui, "Advances in PXL technology at ASET," Digest of Papers XEL 2000, Yokohama, Japan, Nov. 13-14, 2000.
    • (2000) Digest of Papers XEL 2000
    • Matsui, Y.1
  • 5
    • 0034583907 scopus 로고    scopus 로고
    • Feasibility study using 4-Gb DRAM patterns
    • Yokohama Japan, Nov. 13-14
    • K. Suzuki, "Feasibility study using 4-Gb DRAM patterns," Digest of Papers XEL 2000. Yokohama Japan, Nov. 13-14, 2000; K. Suzuki and Y. Matsui, "Advances in x-ray lithography at ASET," J. Photopolymer Sci. and Technol., vol. 13, no. 3, p. 373-378 (2000).
    • (2000) Digest of Papers XEL 2000
    • Suzuki, K.1
  • 6
    • 0034583907 scopus 로고    scopus 로고
    • Advances in x-ray lithography at ASET
    • K. Suzuki, "Feasibility study using 4-Gb DRAM patterns," Digest of Papers XEL 2000. Yokohama Japan, Nov. 13-14, 2000; K. Suzuki and Y. Matsui, "Advances in x-ray lithography at ASET," J. Photopolymer Sci. and Technol., vol. 13, no. 3, p. 373-378 (2000).
    • (2000) J. Photopolymer Sci. and Technol. , vol.13 , Issue.3 , pp. 373-378
    • Suzuki, K.1    Matsui, Y.2
  • 9
    • 0034431228 scopus 로고    scopus 로고
    • Sub-100-nm Device Fabrication Using Proxinuty X-Ray Lithography at Five Levels
    • Dec.
    • Y. Iba et al., "Sub-100-nm Device Fabrication Using Proxinuty X-Ray Lithography at Five Levels," Jpn J Appl Phys, Vol 39, part 1, no 12B, p 173-177 (Dec. 2000).
    • (2000) Jpn J Appl Phys , vol.39 , Issue.PART 1 AND NO 12B , pp. 173-177
    • Iba, Y.1
  • 10
    • 0002800610 scopus 로고    scopus 로고
    • Current status of AURORA-2S and a PXL beam line
    • Yokohama, Japan. Nov 13-14.
    • T. Miyatake, "Current status of AURORA-2S and a PXL beam line," Digest of Papers XEL 2000, Yokohama, Japan. Nov 13-14. 2000.
    • (2000) Digest of Papers XEL 2000
    • Miyatake, T.1
  • 11
    • 0033308388 scopus 로고    scopus 로고
    • Optimum phase condition for low-contrast x-ray masks
    • Dec
    • K Fujii, K. Suzuki, Y. Matsui, "Optimum phase condition for low-contrast x-ray masks," Jpn J. Appl. Phys, Vol. 38, part 1, no 12B, p 7076-7079(Dec 1999).
    • (1999) Jpn J. Appl. Phys , vol.38 , Issue.PART 1 AND NO 12B , pp. 7076-7079
    • Fujii, K.1    Suzuki, K.2    Matsui, Y.3
  • 12
    • 0034314799 scopus 로고    scopus 로고
    • Proposal for a 50 nm proxinuty x-ray lithography system and extension to 35 nm by resist material selection
    • Nov./Dec
    • T Kitayama, K. Itoga, Y. Watanabe, S. Uzawa, "Proposal for a 50 nm proxinuty x-ray lithography system and extension to 35 nm by resist material selection," J. Vac. Sci. Technol. B, vol. 18, p. 2950-2954 (Nov./Dec 2000).
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 2950-2954
    • Kitayama, T.1    Itoga, K.2    Watanabe, Y.3    Uzawa, S.4
  • 13
    • 6644230379 scopus 로고    scopus 로고
    • A CoO Consideration on NGL Technologies
    • Yokohama, Japan, Nov. 13-14
    • Y. Gomei. "A CoO Consideration on NGL Technologies," Digest of Papers XEL 2000, Yokohama, Japan, Nov. 13-14, 2000.
    • (2000) Digest of Papers XEL 2000
    • Gomei, Y.1
  • 14
    • 6644221656 scopus 로고    scopus 로고
    • SAL X-ray Lithography System Printing 125 nm Features at Sanders
    • May/June See also www.xravlitho.com
    • "SAL X-ray Lithography System Printing 125 nm Features at Sanders," Compound Semiconductors. May/June 2000, p. 27-28. See also www.xravlitho.com.
    • (2000) Compound Semiconductors , pp. 27-28


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.