Three dimensional aspects of the shrinking phenomenon of ArF resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4689 II, Issue , 2002, Pages 841-845

  Laufer, Ido ^a   Eytan, Guy ^a   Dror, Ophir ^a  

^a Applied Materials Inc Israel   (Israel)

Author keywords

3D SEM metrology; ArF resist; Resist shrinkage

Indexed keywords

ARGON; ELECTRON BEAMS; ETCHING; MEASUREMENT THEORY; SCANNING ELECTRON MICROSCOPY; SHRINKAGE;

RESIST SHRINKAGE;

PHOTORESISTS;

EID: 0036030238     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.473531     Document Type: Conference Paper

References (5)

1. P. Rao Varanasi, et al, "IBM 193 nm semiconductor resist: Material properties, resist characteristic and lithographic performance", J. Photopolym. Sci. Technol, pp. 493-500, 1999.
2. R. Dammel, et al, "193 resist for deep sub-wavelength applications", J. Photopolym. Sci. Technol, pp. 433-444, 1999.
3. L. Pain, et al, "Study of 193 nm resist behavior under SEM Inspection: How to reduce line - width shrinking effect?", Proc. Interface2000, pp 233, 2000.
4. B. Su and G. Eytan, "Analyzing and Characterizing 193 nm resist shrinkage", Solid State Technology, pp. 52-57, 2001.
5. B. Su and A. Romana, "Study on 193 nm resist Shrinkage after electron beam exposure", Proc. Interface2000, pp. 249, 2000.