Determination of best focus and exposure dose using CD-SEM side-wall imaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4344, Issue 1, 2001, Pages 355-365

  Marschner, Thomas ^a   Eytan, Guy ^b   Dror, Ophir ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Applied Materials Inc Israel   (Israel)

Author keywords

CD metrology; CD SEM; Focus exposure matrix; Side wall profiles

Indexed keywords

ELECTRON BEAMS; FINITE ELEMENT METHOD; FOCUSING; IMAGE RECONSTRUCTION; LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SHRINKAGE;

SIDE-WALL PROFILES;

IMAGING SYSTEMS;

EID: 0034757355     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436761     Document Type: Article

References (11)

1. Approach to CD SEM metrology utilizing the full waveform signal
2. Feature integrity monitoring for process control using a CD SEM
3. CD SEM edge width applications and analysis
4. Shape control using side-wall imaging
5. AFM: A valid reference tool?
6. Accuracy and traceability in dimensional metrology
7. Comparison of electrical CD measurements and cross-section lattice-plane counts of sub-micrometer features replicated in (100) silicon-on-insulator material
8. CD-SEM precision-improved procedure and analysis
9. Characteristics of accuracy for CD metxrology
10. Impact of SEM accuracy on the CD-control during gate patterning process of 0.25 μm and sub-0.25 μm generations
11. Metrology method for the correlation of line edge roughness for different resists before and after etch