Single layer fluoropolymer resists for 157 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 80-92

  Crawford, M K ^a   Farnham, W B ^a   Feiring, A E ^a   Feldman, J ^a   French, R H ^a   Leffew, K W ^a   Petrov, V A ^a   Qiu, W ^a   Schadt III, F L ^a   Tran, H V ^a   Wheland, R C ^a   Zumsteg, F C ^a  

^a DUPONT COMPANY   (United States)

Author keywords

157 nm photoresists; Etch resistance; Fluoropolymers; Lithographic performance; Optical absorbance; Tetrafluoroethylene

Indexed keywords

DISSOLUTION; FLUORINE CONTAINING POLYMERS; ORGANIC COMPOUNDS; SOLUBILITY; TERPOLYMERS;

BUTYL ACRYLATE; ETCH RESISTANCE; HEXAFLUOROISOPROPANOL GROUPS; NORBORNENE FLUOROALCOHOL; OPTICAL ABSORBANCE; TETRAFLUOROETHYLENE;

PHOTORESISTS;

EID: 0141723465     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485206     Document Type: Conference Paper

References (22)

1. International Sematech 2002 Roadmap.
2. M. Lundstrom, "Moore's Law Forever?", Science 299, 210 (2003).
3. R.R. Kunz, T.M. Bloomstein, D.E. Hardy, R.B. Goodman, D.K. Downs, and J.E. Curtin, "Outlook for 157 nm Resist Design", Proc. SPIE 3678, 13-23 (1999).
4. M.K. Crawford, A.E. Feiring, J. Feldman, R.H. French, M. Periyasamy, F.L. Schadt, R.J. Smalley, F.C. Zumsteg, R.R. Kunz, V. Rao, L. Liao, and S.M. Holl, "New Materials for 157 nm Photoresists: Characterization and Properties", Proc. SPIE 3999, 357-364 (2000)
5. M.K. Crawford, A.E. Feiring, J. Feldman, R.H. French, V.A. Petrov, F.L. Schadt, R.J. Smalley, and F.C. Zumsteg, "157 nm Imaging Using Thick Single Layer Resists", Proc. SPIE 4345, 428-438 (2001)
6. M.K. Crawford, W.B. Farnham, A.E. Feiring, J. Feldman, R.H. French, K.W. Leffew, V.A. Petrov, F.L. Schadt, and F.C. Zumsteg, "Fluoropolymers for 157 nm Lithography: Performance of Single Layer Resists", J. Photopolymer Science and Technol. 15, 677-687 (2002).
7. H. Ito, G.M. Wallraff, N. Fendar, P.J. Brock, W.D. Hinsberg, A. Mahorowala, C.E. Larson, H.D. Truong, G. Breyta, and R.D. Allen, "Development of 157 nm positive resists", J. Vac. Sci. Technol. B 19, 2678-2684 (2001)
8. H. Ito, G.M. Wallraff, P. Brock, N. Fender, H. Truong, G. Breyta, DC. Miller, M.H. Sherwood, and R.D. Allen, "Polymer design for 157 nm chemically amplified resists", Proc. SPIE 4345, 273-284 (2001).
9. K. Patterson, M. Yamachika, R. Hung, C. Brodsky, S. Yamada, M. Somervell, B. Osborn, D. Hall, G. Dukovic, J. Byers, W. Conley, and C.G. Willson, "Polymers for 157 nm Photoresist Applications: A Progress Report", Proc. SPIE 3999, 365-374 (2001).
10. M. Toriumi, S. Ishikawa, S. Miyoshi, T. Naito, T. Yamazaki, M. Watanabe, and T. Itani, "Resists materials for 157 nm lithography", Proc. SPIE 4345, 371-378 (2001)
11. M. Toriumi, N. Shida, H. Watanabe, T. Yamazaki, S. Ishikawa, and T. Itani, "Fluoropolymer Resists for 157-nm Lithography", Proc. SPIE 4690, 191-199 (2002)
12. S. Kodama, I. Kaneko, Y. Takebe, S. Okada, Y. Kawaguchi, N. Shida, S. Ishikawa, M. Toriumi, and T. Itani, "Synthesis of Novel Fluoropolymer for 157 nm Photoresists by Cyclo-polymerization", Proc. SPIE 4690, 76-83 (2002).
13. D. Schmaljohann, Y.C. Bae, G.L. Weibel, A.H. Hamad, and C.K. Ober, "Design Strategies for 157 nm Single-Layer Photoresists: Lithographic Evaluation of a Poly(α-trifluoromethyl vinyl alcohol) Copolymer", Proc. SPIE 3999, 330-334 (2000).
14. T.H. Fedynyshyn, R.R. Kunz, R.F. Sinta, M. Sworin, W.A. Mowers, R.B. Goodman, and S.P. Doran, "High Resolution Fluorocarbon Based Resist for 157-nm Lithography", Proc. SPIE 4345, 296-307 (2001).
15. T. Itani, M. Toriumi, T. Naito, S. Ishikawa, S. Miyoshi, T. Yamazaki, and M. Watanabe, J. Vac. Sci. Technol. B19, 2705-2708 (2001).
16. R.H. French, R.C. Wheland, W. Qui, M.F. Lemon, E. Zhang, J. Gordon, V.A. Petrov, V.F. Cherstkov, and N.I. Delaygina, "Novel Hydrofluorocarbon Polymers for use as Pellicles in 157 nm Semiconductor Photolithography: Fundamentals of Transparency", J. Fluorine Chem., in press.
17. R.H. French, J. Feldman, F.C. Zumsteg, M.K. Crawford, A.E. Feiring, V.A. Petrov, F.L. Schadt, and R.C. Wheland, "Progress in Materials Development for 157 nm Photolithography: Photoresists and Pellicles", Semiconductor FabTech 14, 167 (2001).
18. G. Taylor, C.B. Xu, G. Teng, J. Leonard, C. Szmanda, W. Lawrence, S. Nur, K. Brown, and A. Stephen, "Factors influencing the properties of fluoropolymer-based resists for 157 nm lithography", Proc. SPIE 4690, 51-57 (2002).
19. A.E. Feiring, M.K. Crawford, W.B. Farnham, J. Feldman, R.H. French, K.W. Leffew, V.A. Petrov, F.L. Schadt, R.C. Wheland, and F.C. Zumsteg, "Design of very transparent fluoropolymer resists for semiconductor manufacture at 157 nm", J. Fluorine Chem., in press.
20. K.S. Guigley, A.E. Feiring, P.C. Painter, and M.M. Coleman, "Infrared Studies of Polymer Blends Containing a Copolymer of Tetrafluoethylene and a Hexafluoroisopropanol Substituted Vinyl Ether", J. Macromol. Sci. Physics B41, 207 (2002).
21. G.M. Wallraf, J. Opitz, W. Hinsberg, and F. Houle, "Reactivity and Kinetic Parameters of UVIIHS", Proc. SPIE 3049, 492-500 (1997).
22. G.M. Wallraf, W.D. Hinsberg, F.A. Houle, M. Morrison, C.E. Larson, M. Sanchez, J. Hoffnagle, P.J. Brock, and G. Breyta, "Experimental Method for Quantifying Acid Diffusion in Chemically Amplified Resists", Proc. SPIE 3678, 138-148 (1999).