Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 524-529

  He, L ^a   Wang, S L ^a   Yang, J R ^a   Yu, M F ^a   Wu, Y ^a   Chen, X Q ^a   Fang, W Z ^a   Qiao, Y M ^a   Gui, Yongsheng ^a   Chu, Junhao ^a  

^a Shanghai Research Center for Advanced Materials   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); ENERGY GAP; EVAPORATION; MERCURY COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; VACUUM APPLICATIONS;

DOUBLE CAP LAYERS;

MOLECULAR BEAM EPITAXY;

EID: 0032667304     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01395-5     Document Type: Article

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