Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 476-481

  Rajavel, R D ^a   Jamba, D M ^a   Jensen, J E ^a   Wu, O K ^a   Le Beau, C ^a   Wilson, J A ^b   Patten, E ^b   Kosai, K ^b   Johnson, J ^b   Rosbeck, J ^b   Goetz, P ^b   Johnson, S M ^b  

^a Hughes Aircraft Co   (United States)

^b Santa Barbara Research Center   (United States)

Author keywords

Infrared detectors; Mid wave detectors; Molecular beam epitaxy (MBE); Two color detectors

Indexed keywords

EID: 0000375217     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0180-y     Document Type: Article

References (14)

1. J.A. Wilson, E.A. Patten, G.R. Chapman, K. Kosai, B. Baumgratz, P. Goetz, S. Tighe, R. Risser, R. Herald, W.A. Radford, T. Tung and W.A. Terre, SPIE 2274, 117 (1994).
2. D.A. Scribner, M.R. Kruer and J.M. Killiany, Proc. IEEE 79, 66 (1991).
3. R.D. Rajavel, D.M. Jamba, O.K. Wu, J.A. Roth, P.D. Brewer, J.E. Jensen, C.A. Cockrum, G.M. Venzor and S.M. Johnson, J. Electron. Mater. 25, 1410 (1996).
4. R.D. Rajavel, D.M. Jamba, J.E. Jensen, O.K. Wu, C.A. Cockrum, J.A. Wilson, E.A. Patten, K. Kosai, J. Rosbeck, P. Goetz and G. Venzor, to be published in Mater. Res. Soc. Sym. Proc., Symp. O, Fall 1996 Meeting.
5. T. Tung, L.V. DeArmond, R.F. Herald, P.E. Herning, M.H. Kalisher, D.A. Olson, R.F. Risser and S.J. Tighe, SPIE 1735, 109 (1992).
6. E. R. Blazejewski, J.M. Arias, G.M. Williams, W. McLevige, M. Zandian and J. Pasko, J. Vac. Sci. Technol. B 10, 1626 (1992).
7. M.B. Reine, P.W. Norton, R. Starr, M.H. Weiler, M. Kestigian, B.L. Musicant, P. Mitra, T. Schimert, F.C. Case, I.B. Bhat, H. Ehsani and V. Rao, J. Electron. Mater. 24, 669 (1995).
8. R.D. Rajavel, D.M. Jamba, O.K. Wu, J.E. Jensen, J.A. Wilson, E.A. Patten, K. Kosai, P. Goetz, G.R. Chapman and W.A. Radford, accepted for publication J. Cryst. Growth.
9. P.S. Wijewarnasuriyu, S.S. Yoo, J.P. Faurie and S. Sivananthan, J. Electron. Mater. 25, 1300 (1996).
10. R.D. Rajavel, O.K. Wu, J.E. Jensen, C.A. Cockrum, G.M. Venzor, E.A. Patten, P.M. Goetz, D. Leonard and S.M. Johnson, Mater. Res. Soc. Symp. Proc. 421, 335 (Pittsburgh, PA: Mater. Res. Soc., 1996).
11. J.R. Meyer and F. J. Bartoli, J. Vac. Sci. Technol. 21, 237 (1982).
12. G.L. Hansen, J.L. Schmit and T.N. Casselman, J. Appl. Phys. 53, 7099 (1982).
13. S.M. Johnson, J.B. Jones, W.L. Ahlgren, W.J. Hamilton, M. Ray and G.S. Tompa, Long Wavelength Semiconductor Devices, Materials, and Processes, Vol. 216, ed. A. Katz, R.M. Biefield, R.L. Gunshor and R.J. Malik (Pittsburgh, PA: Mater. Res. Soc., 1991), p. 141.
14. J. S. Chen, U.S. Patent No. 4,897,152.