Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Chinese Physics Letters

Volumn 20, Issue 9, 2003, Pages 1552-1553

  Lu, Min ^a   Yang, Hua ^a   Li, Zi Lan ^a   Yang, Zhi Jian ^a   Li, Zhong Hui ^a   Ren, Qian ^a   Jin, Chun Lai ^a   Lu, Shu ^a   Zhang, Bei ^a   Zhang, Guo Yi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GALLIUM NITRIDE; III-V SEMICONDUCTORS; MAGNESIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SILICON COMPOUNDS; X RAY DIFFRACTION;

DOPANTS EFFECTS; DOPED SAMPLE; EFFECT OF DOPANTS; ETCHING PITS; GAN FILM; LOWER DENSITY; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; MG-DOPING;

DEFECTS;

EID: 0141567645     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/9/341     Document Type: Article

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