730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells

Applied Physics Letters

Volumn 72, Issue 6, 1998, Pages 641-643

  Al Muhanna, A ^a   Wade, J K ^a   Mawst, L J ^a   Fu, R J ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Applied Optronics Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LEAKAGE CURRENTS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM THEORY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TEMPERATURE;

CARRIER LEAKAGE; CATASTROPHIC OPTICAL MIRROR DAMAGE; INDIUM GALLIUM ARSENIC PHOSPHIDE; THRESHOLD CURRENT DENSITIES;

QUANTUM WELL LASERS;

EID: 0032498487     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120831     Document Type: Article

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