Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1.2-W continuous-wave operation at 735 nm

IEEE Photonics Technology Letters

Volumn 13, Issue 1, 2001, Pages 7-9

  Sumpf, Bernd ^a   Beister, Gert ^a   Erbert, Götz ^a   Fricke, Jörg ^a   Knauer, Arne ^a   Pittroff, Wolfgang ^a   Ressel, Peter ^a   Sebastian, Jürgen ^a   Wenzel, Hans ^a   Tränkle, Günther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH POWER LASERS; LIGHT EMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN; TENSILE STRESS;

ALUMINUM GALLIUM ARSENIDE; GALLIUM ARSENIDE PHOSPHIDE; HIGH POWER DIODE LASERS;

SEMICONDUCTOR LASERS;

EID: 0035083124     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.903203     Document Type: Article

References (12)

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