2W reliable operation of λ = 735nm GaAsP/AlGaAs laser diodes

Electronics Letters

Volumn 37, Issue 6, 2001, Pages 351-353

  Sumpf, B ^a   Beister, G ^a   Erbert, G ^a   Fricke, J ^a   Knauer, A ^a   Pittroff, W ^a   Ressel, P ^a   Sebastian, J ^a   Wenzel, H ^a   Trankle G ^a  

^a FBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HIGH POWER LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN RATE; TENSILE TESTING;

ALUMINUM GALLIUM ARSENIDE; GALLIUM ARSENIDE PHOSPHIDE; OPTICAL CAVITY;

QUANTUM WELL LASERS;

EID: 0035868128     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010266     Document Type: Article

References (12)

1. High power AlGaAs-GaAs visible lasers
2. High-power InAlGaAs-GaAs laser diode emitting near 731 nm
3. High-power, reliable operation of 730nm AlGaAs laser diodes
4. Tensile-strained AlGaAsP and InGaAsP-AlGaInP quantum well laser diodes for TM-mode emission in the wavelength range 650nm < λ < 850nm
5. 730-nm-emitting Al-free active region diode lasers with compressively strained InGaAsP quantum wells
6. High-performance, reliable, 730-nm-emitting Al-free active region diode lasers
7. 1W CW reliable λ = 730nm aluminium-free active layer diode laser
8. High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes
9. Dependence of polarization mode and threshold current on tensile strain in AlGaAs/GaAsP quantum well lasers
10. High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715nm and 790nm
11. 1-y/AlGaAs (λ = 735nm) QW diode laser
12. Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1.2W CW operation at 735nm