Afterglow thermal oxidation of silicon carbide

Materials Research Society Symposium - Proceedings

Volumn 742, Issue , 2002, Pages 227-232

  Hoff, Andrew M ^a   Tibrewala, Arti ^a   Saddow, Stephen E ^a  

^a University of South Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVES; OXIDATION; PHOTORESISTS; PLASMAS;

THERMAL OXIDATION;

SILICON CARBIDE;

EID: 0037955952     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-742-k4.7     Document Type: Article

References (9)

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8. th Symposium on Plasma Processing, The Elecrochemical Society, (1986).
9. I.C. Vickridge, D. Tromson, I. Trimaille, J.-J. Ganem, E. Szilágyi, and G. Battistig, "Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC," Nucl. Inst. and Meth. in Phys. Resrch. B, 190, 574-578 (2002).