Plasma oxidation of SiC at low temperatures (below 300°c)

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1105-1108

  Satoh, Masataka ^a   Shimada, Hisanori ^a   Nakamura, Tomonori ^a   Nagamoto, Naoshi ^a   Yanagihara, Sachiko ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

O2 plasma; Oxidation

Indexed keywords

OXIDATION; TEMPERATURE; THERMOOXIDATION; IONIZATION; LOW TEMPERATURE OPERATIONS; LUMINESCENCE; PLASMAS;

BREAKDOWN FIELD; DISCHARGED PLASMA; LOW TEMPERATURES; LOW-TEMPERATURE OXIDATION; OXIDATION RATES; PLASMA OXIDATION; THERMAL OXIDATION; THICK PLASMAS;

SILICON CARBIDE;

EID: 0036436384     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1105     Document Type: Conference Paper

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