Process dependence of inversion layer mobility in 4H-SiC devices

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Alok, Dev ^a   Arnold, Emil ^a   Egloff, Richard ^a  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

DRIFT MOBILITY; FIELD EFFECT MOBILITY;

MOSFET DEVICES;

EID: 0033686314     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)