Highly selective SiO2 etching using CF4/C2H4

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 SUPPL. B, 1997, Pages 2477-2481

  Sakaue, Hiroyuki ^a   Kojima, Akisiro ^a   Osada, Naomichi ^a   Shingubara, Shoso ^a   Takahagi, Takayuki ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

CF4 C2H4; Etching; FT IR; High selectivity; Polymer film

Indexed keywords

ATTENUATED TOTAL REFLECTION (ATR) MEASUREMENTS;

DEPOSITION; ETHANE; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; PLASMA ETCHING; PLASTIC FILMS; STRUCTURE (COMPOSITION); X RAY PHOTOELECTRON SPECTROSCOPY;

SILICA;

EID: 0031119668     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2477     Document Type: Article

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